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| GaN基SiTrO3薄膜的生长偏转模型和模拟研究 |
| 黄平1,2, 杨春1,3, 介伟伟1,2 |
| 1.四川师范大学可视化计算与虚拟现实四川省重点实验室 成都 610068
2.四川师范大学物理与电子工程学院 成都 610068
3.电子科技大学电子薄膜与集成器件国家重点实验室 成都610054
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| First-principles Calculations for SrTiO3 Films Growth on GaN(0001) Surfaces |
| HUANG Ping1,2, YANG Chun1,3, JIE Weiwei1,2, |
1.Visual computing and virtual reality key laboratory of Sichuan province, Sichuan Normal University, Chengdu 610068
2.College of Physics and Electronic Engineering, Sichuan Normal University, Chengdu, 610068
3.State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chendu 610054 |
引用本文:
黄平 杨春 介伟伟. GaN基SiTrO3薄膜的生长偏转模型和模拟研究[J]. 材料研究学报, 2010, 24(4): 389-394.
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First-principles Calculations for SrTiO3 Films Growth on GaN(0001) Surfaces[J]. Chin J Mater Res, 2010, 24(4): 389-394.
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