α籽晶促进低温反应溅射沉积α-Al2O3薄膜

doi:10.11901/1005.3093.2021.254

材料研究学报

2022, Vol. 36

Issue (1): 8-12 DOI: 10.11901/1005.3093.2021.254

研究论文

本期目录 | 过刊浏览

α籽晶促进低温反应溅射沉积α-Al₂O₃薄膜

李修贤, 邱万奇(

), 焦东玲, 钟喜春, 刘仲武

华南理工大学材料科学与工程学院广州 510640

Promotion Effect of α-Al₂O₃ Seeds on Low-temperature Deposition of α-Al₂O₃ Films by Reactive Sputtering

LI Xiuxian, QIU Wanqi(

), JIAO Dongling, ZHONG Xichun, LIU Zhongwu

School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China

引用本文:

李修贤, 邱万奇, 焦东玲, 钟喜春, 刘仲武. α籽晶促进低温反应溅射沉积α-Al₂O₃薄膜[J]. 材料研究学报, 2022, 36(1): 8-12.
Xiuxian LI, Wanqi QIU, Dongling JIAO, Xichun ZHONG, Zhongwu LIU. Promotion Effect of α-Al₂O₃ Seeds on Low-temperature Deposition of α-Al₂O₃ Films by Reactive Sputtering[J]. Chinese Journal of Materials Research, 2022, 36(1): 8-12.

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摘要:

分别使用反应溅射Al+α-Al₂O₃(15% α-Al₂O₃，质量分数)复合靶和在金箔基体表面预植α-Al₂O₃籽晶，促进α-Al₂O₃薄膜的低温沉积。使用扫描电子显微镜(SEM)、掠入射X射线衍射(GIXRD)和能谱仪(EDS)等方法表征薄膜样品的表面形貌、相结构和元素组成。结果表明，在射频反应溅射Al+α-Al₂O₃复合靶、沉积温度为560℃条件下能在Si(100)基体上沉积出化学计量比的单相α-Al₂O₃薄膜；使用射频反应溅射Al靶、沉积温度为500℃条件下能在预植α-Al₂O₃籽晶(籽晶密度为10⁶/cm²)的金箔表面沉积出化学计量比的单相α-Al₂O₃薄膜。两种研究方案的结果均表明，α-Al₂O₃籽晶能促进低温沉积单相α-Al₂O₃薄膜。

关键词 ：材料表面与界面, α-Al₂O₃薄膜, 反应溅射, α籽晶, 低温沉积

Abstract：

The films of corundum structure Al₂O₃ were successfully deposited on gold foil with pre-deposited α-Al₂O₃ seeds at low-temperature by reactive RF (Radio Frequency) sputtering with Al+α-Al₂O₃(15% α-Al₂O₃) target. The surface morphology, phase constituent and chemical composition of the as-deposited films were characterized by SEM, GIXRD and EDS. Results show that films of single α-Al₂O₃ with corundum-like crystallographic structure could be deposited at 560℃ on Si(100) substrate by reactive sputtering with Al+α-Al₂O₃ as composite target, while the substrate temperature even could be reduced to 500℃ for gold foil with pre-deposited α-Al₂O₃ seeds (the density of α-Al₂O₃ seeds is ~10⁶/cm²) by reactive sputtering with pure Al as target. The results of the above two deposition methods proved that α-Al₂O₃ seeds may be favorable for the deposition of single phase α-Al₂O₃ films on the substrate at lower temperature.

Key words： surface and interface in the materials α-Al₂O₃ films reactive sputtering α seeds low-temperature deposition

收稿日期: 2021-04-19

ZTFLH:

TQ174

基金资助:国家自然科学基金(51971095);广东省自然科学基金(2020A1515011087)

作者简介: 李修贤，男，1996年生，硕士生

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https://www.cjmr.org/CN/10.11901/1005.3093.2021.254 或 https://www.cjmr.org/CN/Y2022/V36/I1/8

图1 磁控溅射系统的结构

表1 在不同温度溅射Al+α-Al2O3复合靶和Al靶沉积薄膜的元素组成

图2 在500℃和560℃反应溅射Al靶以及在560℃反应溅射Al+α-Al2O3靶沉积氧化铝薄膜的GIXRD谱

图3 Al2O3粉末的XRD谱

图4 在金箔基体表面反应溅射Al靶沉积氧化铝薄膜的GIXRD谱

图5 在金箔基体表面α-Al2O3籽晶的分布

图6 在600℃溅射时间不同的α-Al2O3籽晶的形貌

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