Ti掺杂MoS2薄膜的抗氧化性和电学性能

doi:10.11901/1005.3093.2020.169

材料研究学报

2021, Vol. 35

Issue (1): 59-64 DOI: 10.11901/1005.3093.2020.169

研究论文

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Ti掺杂MoS₂薄膜的抗氧化性和电学性能

谢明玲¹, 张广安², 史鑫¹, 谭稀¹, 高晓平¹, 宋玉哲¹(

)

^1.甘肃省科学院传感技术研究所兰州 730000
^2.中科院兰州化学物理研究所固体润滑国家重点实验室兰州 730000

Anti-oxidization and Electronic Properties of Ti Doped MoS₂ Films

XIE Mingling¹, ZHANG Guang'an², SHI Xing¹, TAN Xi¹, GAO Xiaoping¹, SONG Yuzhe¹(

)

^1.Institute of Sensor Technology, Gansu Academy of Sciences, Lanzhou 730000, China
^2.State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Lanzhou 730000, China

引用本文:

谢明玲, 张广安, 史鑫, 谭稀, 高晓平, 宋玉哲. Ti掺杂MoS₂薄膜的抗氧化性和电学性能[J]. 材料研究学报, 2021, 35(1): 59-64.
Mingling XIE, Guang'an ZHANG, Xing SHI, Xi TAN, Xiaoping GAO, Yuzhe SONG. Anti-oxidization and Electronic Properties of Ti Doped MoS₂ Films[J]. Chinese Journal of Materials Research, 2021, 35(1): 59-64.

全文: PDF(2768 KB) HTML

摘要:

用磁控溅射在硅片上制备MoS₂和Ti-MoS₂薄膜，并将其在恒温恒湿箱中在AT 30℃、RH 70%条件下存储360 h。使用XRD谱、XPS谱和紫外-可见分光光度计、四探针测试仪表征分析薄膜的结构、在恒温恒湿条件下存储前后的表面化学状态和电学性能，研究了Ti掺杂对薄膜抗氧化性和电学性能的影响。结果表明：Ti掺杂影响MoS₂薄膜的晶体取向。随着Ti靶电流的增大薄膜的结晶性变差，Ti靶电流为0.6A时薄膜呈无定型结构且禁带宽度减小、电导率提高；在恒温恒湿条件下存储后薄膜的部分氧化而呈MoS₂与MoO₃的复合状态，随着Ti靶电流的增大I_Mo-O/I_Mo-S比提高、禁带宽度略有增大，Ti靶电流为0.4A的Ti-MoS₂薄膜其化学稳定性较高。

关键词 ：材料科学基础学科, MoS₂薄膜, 磁控溅射, 抗氧化性, 电学性能

Abstract：

Thin films of MoS₂ and Ti-MoS₂ were deposited on Si substrate by using magnetron sputtering respectively, and then oxidized in atmosphere with 70%RH at 28℃ for 360 h via a temperature and humidity chamber. Thereafter, the oxidation performance and electrical properties of the above two MoS₂ films were characterized by XRD, XPS, UV-Vis spectrophotometer and four-point probe method. The results show that the Ti doping can affect the crystal orientation of MoS₂ film, and the X-ray diffraction peaks of (110) and (100) of MoS₂ disappear after Ti doping. The films prepared with applied current of 0.6 A for Ti-target are amorphous. Whilst, the band gap of Ti-MoS₂ decrease and the conductivity increase for films, with the increasing applied current for the Ti target. The films are partially oxidized and present the composite state of MoS₂ and MoO₃ after oxidation in the atmosphere with 70%RH at 28℃ for 360 h, and the I_Mo-O/I_Mo-S ratio and band gap increase with the increasing applied current for the Ti target. Especially, the Ti-MoS₂ film, prepared with applied current of 0.4 A for the Ti target, exhibits the better chemical stability.

Key words： foundation discipline in material science MoS₂film magnetron sputtering anti-oxidization electrical property

收稿日期: 2020-05-19

ZTFLH:

TH117

基金资助:甘肃省科学院青年科技创新基金(2018QN-04);甘肃省科学院与中科院合作项目(2017HZ-02);甘肃省科学院创新团队建设项目(2020CX005-01);甘肃省科学院应用研究与开发计划项目(2018JK-16)

作者简介: 谢明玲，女，1989年生，助理研究员

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https://www.cjmr.org/CN/10.11901/1005.3093.2020.169 或 https://www.cjmr.org/CN/Y2021/V35/I1/59

图1 非平衡磁控溅射示意图

图2 不同Ti掺杂量MoS2薄膜的XRD谱

图3 PureMoS2、0.2A Ti-MoS2、0.4A Ti-MoS2和0.6A Ti-MoS2薄膜在26℃和RH70%条件下存储336 h前后的紫外漫反射谱

表1 Pure MoS2、02A Ti-MoS2、04A Ti-MoS2和06A Ti-MoS2薄膜在26℃ RH70%条件下存储336 h前后的半导体性能参数

图 4 MoS2和Ti- MoS2薄膜的XPS谱

表2 MoS2和Ti-MoS2薄膜在26℃ RH70%存储前后XPS谱中的IMo-O/IMo-S比

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