TaN薄膜的等离子体增强原子层沉积及其抗Cu扩散性能

doi:10.11901/1005.3093.2017.799

材料研究学报

2019, Vol. 33

Issue (1): 9-14 DOI: 10.11901/1005.3093.2017.799

研究论文

本期目录 | 过刊浏览

TaN薄膜的等离子体增强原子层沉积及其抗Cu扩散性能

王永平,丁子君,朱宝,刘文军,丁士进(

)

专用集成电路与系统国家重点实验室复旦大学微电子学院上海 200433

Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion

Yongping WANG,Zijun DING,Bao ZHU,Wenjun LIU,Shijin DING(

)

State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China

引用本文:

王永平,丁子君,朱宝,刘文军,丁士进. TaN薄膜的等离子体增强原子层沉积及其抗Cu扩散性能[J]. 材料研究学报, 2019, 33(1): 9-14.
Yongping WANG, Zijun DING, Bao ZHU, Wenjun LIU, Shijin DING. Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion[J]. Chinese Journal of Materials Research, 2019, 33(1): 9-14.

全文: PDF(2217 KB) HTML

摘要:

使用Ta[N(CH₃)₂]₅和NH₃等离子体作为反物用等离子体增强原子层沉积工艺生长了TaN薄膜，借助原子力显微镜、X射线光电子能谱、四探针和X射线反射等手段研究了薄膜的性能与工艺条件之间的关系。结果表明，TaN薄膜主要由Ta、N和少量的C、O组成。当衬底温度由250℃提高到325℃时Ta与N的原子比由46:41升高到55:35，C的原子分数由6%降低到2%。同时，薄膜的密度由10.9 g/cm³提高到11.6 g/cm³，电阻率由0.18 Ω?cm降低到0.044 Ω?cm。与未退火的薄膜相比，在400℃退火30 min后TaN薄膜的密度平均提高了~0.28 g/cm³，电阻率降低到0.12~0.029 Ω?cm。在250℃生长的3 nm超薄TaN阻挡层在500℃退火30 min后仍保持良好的抗Cu扩散性能。

关键词 ：材料表面与界面, 原子层沉积, 扩散阻挡层, 退火, TaN薄膜

Abstract：

TaN films were deposited on monocrystalline silicon wafer via plasma enhanced atomic layer deposition with Ta[N(CH₃)₂]₅ as precursor and NH₃ plasma as coreactant. The as deposited films were characterized by means of atomic force microscopy, X-ray photoelectron spectroscopy, four-point probe and X-ray reflection. The results show that the as-deposited film consists mainly of TaN with small quantities of C and O. As the deposition temperature increases from 250^oC to 325^oC, the ratio of Ta/N increases from 46:41 to 55:35, and the C-content (atomic fraction) decreases from 6% to 2%. Meanwhile, the resistivity of the film gradually decreases from 0.18 Ω?cm to 0.044 Ω?cm, and the film density increases from 10.9 g/cm³ to 11.6 g/cm³. After annealing at 400^oC for 30 min, the film density shows an increment of ~0.28 g/cm³ on average, and the film resistivity decreases to 0.12-0.029 Ω?cm. Further, the barrier performance test results indicate that the TaN film of 3 nm in thickness deposited at 250^oC demonstrates a perfect barrier function after annealing at 500^oC for 30 min.

Key words： surface and interface in the materials atomic layer deposition diffusion barrier annealing TaN films

收稿日期: 2018-01-11

ZTFLH:

TN304

基金资助:国家科技重大专项(2015ZX02102-003)

作者简介: 王永平，男，1986年生，博士生

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https://www.cjmr.org/CN/10.11901/1005.3093.2017.799 或 https://www.cjmr.org/CN/Y2019/V33/I1/9

图1 TaN薄膜生长速率与衬底温度的关系

图2 生长速率与NH3脉冲时间和NH3流量的关系

图3 薄膜厚度与反应循环数目的关系

图4 TaN薄膜的XPS的全谱随Ar+原位刻蚀时间的变化图

表1 在250℃沉积的TaN薄膜的元素原子分数随原位Ar+刻蚀时间的变化

表2 Ar+原位刻蚀9 min的不同TaN薄膜的原子分数

图5 在不同温度生长的TaN薄膜的Ta 4f 和C 1s的XPS高分辨率谱

图6 在不同温度生长的TaN薄膜(~2 nm)的表面形貌

图7 未退火和在400℃退火的TaN薄膜的电阻率和密度

图8 在不同温度退火后MOS器件的击穿场强分布和代表性I-V曲线

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