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Effect of Heat Treatment on Microstructure and Al-water Reactivity of Al-Mg-Ga-In-Sn Alloys |
DU Bangdeng1, LIU Jun2, WANG Xiaowan1, WANG Wei1( ), CHEN Demin1( ) |
1.Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China 2.Institute of Petroleum Engineering Research, Sinopec Jianghan Oilfield, Wuhan 430035, China |
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Cite this article:
DU Bangdeng, LIU Jun, WANG Xiaowan, WANG Wei, CHEN Demin. Effect of Heat Treatment on Microstructure and Al-water Reactivity of Al-Mg-Ga-In-Sn Alloys. Chinese Journal of Materials Research, 2021, 35(1): 25-35.
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Abstract Al-Mg-Ga-In-Sn alloys with different Mg-contents were prepared and then subjected to solution and aging treatment. The microstructure and corrosion morphology after immersion in water of alloys was characterized by means of XRD and SEM with EDX. The Volta potential differences (ΔVPD) of interfacial phases with respect to Al matrix were measured using AFM/SKPFM. The Al-water reactivity of alloys in waters at different temperature were measured by using drainage method. The heat treatment influences the phase type, morphology of interfacial phases, and the content of Mg and Ga inside Al grains. As the Mg content is below 4% the heat-treated alloys contain interfacial phases of Mg2Sn, MgGa, MgGa2 andMgIn. Mg5Ga2 and Mg2Ga phases occurs as the Mg content of alloy is c.a. 5%. MgGa phase precipitates within Al grains of the aged alloys. The heat-treated alloys exhibit higher the Volta potential differences (ΔVPD) of interfacial phases with respect to Al in comparison with the cast ones. The generation rate and yield amount of hydrogen correlate with Mg contents of the heat-treated alloys. The reasons that the heat treatment affects the microstructures of alloys and the Volta potential differences (ΔVPD) of interfacial phases with respect to Al were analyzed, and the effect of heat treatment on the Al-water reactivity of alloys was also discussed.
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Received: 16 March 2020
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Fund: National Science and Technology Major Project of the Ministry of Science and Technology of China(2016ZX05060004);Foundation of Chinese Academic of Science(GXJJ-17-M158) |
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