|
|
Deformation Mechanism of Nanoscale Polycrystalline α-Silicon Carbide Based on Molecular Dynamics Simulation |
SHI Yuanji1, CHEN Xianbing1, WU Xiujuan1, WANG Hongjun1( ), GUO Xunzhong2, LI Junwan3 |
1 School of Mechanical Engineering, Nanjing Vocational University of Industry Technology, Nanjing 210046, China 2 College of Material Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China 3 School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China |
|
Cite this article:
SHI Yuanji, CHEN Xianbing, WU Xiujuan, WANG Hongjun, GUO Xunzhong, LI Junwan. Deformation Mechanism of Nanoscale Polycrystalline α-Silicon Carbide Based on Molecular Dynamics Simulation. Chinese Journal of Materials Research, 2020, 34(8): 628-634.
|
Abstract Based on the molecular dynamics method, Vashishta potential function was used to study the plastic deformation mechanism of polycrystalline α-silicon carbide matrix under the action of nano indentation in terms of the effect of grain boundary and temperature. The load displacement curve was analyzed, and the change of atomic failure and migration path in the deformation area was described by identifying the deformation structure. As the contact load increased the amorphous phase transformation occurred in the contact zone and expanded to the crystal interior, which was blocked by the grain boundary. With the increase of the load, the grain boundary as the source of 1/2<110> perfect dislocation emission will slip at high stress level. In addition, with the increase of temperature the bearing capacity of SiC polycrystal decreases, especially the plastic deformation occurs inside the material, the dislocation grows from the grain boundary to the inside of the crystal, and finally forms 'U-shaped' dislocation ring.
|
Received: 25 December 2019
|
|
Fund: Natural Science Foundation of the Jiangsu Higher Education Institutions of China(19KJB430024);Natural Science Foundation of Jiangsu Province(BK20181036);National Science Foundation of NIIT(YK190109) |
[1] |
Padture N P. Advanced structural ceramics in aerospace propulsion [J]. Nature materials, 2016, 15(8): 804
pmid: 27443899
|
[2] |
Pan Q, Zhou H, Lu Q, et al. History-independent cyclic response of nanotwinned metals [J]. Nature, 2017, 551(7679): 214
pmid: 29088707
|
[3] |
Taloni A, Vodret M, Costantini G, et al. Size effects on the fracture of microscale and nanoscale materials [J]. Nature Reviews Materials, 2018, 3(7): 211
|
[4] |
Bourne N, Millett J, Pickup I. Delayed failure in shocked α-silicon carbide [j]. journal of applied physics, 1997, 81(9): 6019
|
[5] |
Millett J, Bourne N, Dandekar D. Delayed failure in a shock-loaded α-silicon carbide [J]. Journal of applied physics, 2005, 97(11): 113513
|
[6] |
Pickup I, Barker A. Damage kinetics in α-silicon carbide; proceedings of the AIP Conference Proceedings, F, 1998 [C]. AIP
|
[7] |
Plimpton S. Fast Parallel Algorithms for Short-Range Molecular-Dynamics [J]. J Comput Phys, 1995, 117(1): 1
|
[8] |
Kelchner C L, J P S, C H J. Dislocation nucleation and defect structure during surface indentation [J]. Phys Rev B, 1998, 5811085
|
[9] |
Branicio P S, Zhang J, Rino J P, et al. Shock-induced microstructural response of mono-and nanocrystalline SiC ceramics [J]. Journal of Applied Physics, 2018, 123(14): 145902
|
[10] |
Zhang J, Branicio P S. Molecular dynamics simulations of plane shock loading in SiC [J]. Procedia Engineering, 2014, 75150
|
[11] |
Makeev M A, Srivastava D. Hypersonic velocity impact on a-SiC target: A diagram of damage characteristics via molecular dynamics simulations [J]. Applied Physics Letters, 2008, 92(15): 151909
|
[12] |
Makeev M A, Srivastava D. Molecular dynamics simulations of hypersonic velocity impact protection properties of CNT/a-SiC composites [J]. Composites Science and Technology, 2008, 68(12): 2451
|
[13] |
Makeev M A, Sundaresh S, Srivastava D. Shock-wave propagation through pristine a-SiC and carbon-nanotube-reinforced a-SiC matrix composites [J]. Journal of Applied Physics, 2009, 106(1): 014311
|
[14] |
Hirel P. Atomsk: a tool for manipulating and converting atomic data files [J]. Comput Phys Commun, 2015, 197212
doi: 10.1016/j.cpc.2012.05.019
pmid: 25540463
|
[15] |
Xiang H, Li H, Fu T, et al. Formation of prismatic loops in AlN and GaN under nanoindentation [J]. Acta Materialia, 2017, 138131-9
pmid: 22368454
|
[16] |
Hoover W G. Constant-pressure equations of motion [J]. Physical Review A, 1986, 34(3): 2499
|
[17] |
Vashishta P, Kalia R K, Rino J P, et al. Interaction potential for SiO 2: a molecular-dynamics study of structural correlations [J]. Phys Rev B, 1990, 41(17): 12197
|
[18] |
Vashishta P, Kalia R K, Nakano A, et al. Interaction potential for α-silicon carbide: a molecular dynamics study of elastic constants and vibrational density of states for crystalline and amorphous α-silicon carbide [J]. Journal of applied physics, 2007, 101(10): 103515
|
[19] |
Maras E, Trushin O, Stukowski A, et al. Global transition path search for dislocation formation in Ge on Si (001) [J]. Comput Phys Commun, 2016, 20513
|
[20] |
Sun S, Peng X, Xiang H, et al. Molecular dynamics simulation in single crystal 3C-SiC under nanoindentation: Formation of prismatic loops [J]. Ceramics International, 2017, 43(18): 16313
doi: 10.1016/j.ceramint.2017.09.003
|
No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
|
Shared |
|
|
|
|
|
Discussed |
|
|
|
|