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| Electronic Properties of Amorphous Indium-gallium-zinc Oxide Thin Film Fabricated by Magnetron Sputtering |
Mingjie CAO,Ming ZHAO,Daming ZHUANG( ),Li GUO,Liangqi OUYANG,Xiaolong LI,Jun SONG |
| Key Lab of Advanced Processing and Manufacturing, Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China |
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Cite this article:
Mingjie CAO,Ming ZHAO,Daming ZHUANG,Li GUO,Liangqi OUYANG,Xiaolong LI,Jun SONG. Electronic Properties of Amorphous Indium-gallium-zinc Oxide Thin Film Fabricated by Magnetron Sputtering. Chinese Journal of Materials Research, 2015, 29(1): 51-54.
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Abstract Amorphous indium-gallium-zinc oxide (a-IGZO) thin films were fabricated using mid-frequency AC magnetron sputtering deposition with variable oxygen flow rate and sputtering current. The influence of processing parameters on the electronic properties of the films was investigated by means of analyses of XRD and XRF, as well as Hall Effect measurement. The results show that all the samples are amorphous with compositions roughly equal to that of the target. The change of sputtering current had no significant effect on the electronic properties. But the carrier concentration of the samples exhibited an obvious change as the increase of the O2 flow rate, which slightly increased and then rapidly decreased. The samples with higher carrier concentration exhibited larger Hall mobility. The average transmission of the IGZO thin films deposited with large O2 flow rate is above 90%.
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Received: 08 July 2014
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