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Effect of annealing temperature on the electrical properties of low voltage ZnO-based ceramic film |
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华中科技大学 |
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Cite this article:
;. Effect of annealing temperature on the electrical properties of low voltage ZnO-based ceramic film. Chin J Mater Res, 2005, 19(1): 102-106.
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Abstract The effect of annealing temperature on the electrical properties of low voltage
ZnO--based ceramic film was investigated. The results show that Zn$_{7}$Sb$_{2}$O$_{12}$
and ZnCr$_{2}$O$_{4}$ phases can be formed at a lower annealing temperature (550℃) by
the solution doping, and the pyrochlore phase is not detected by XRD from 550℃ to
950℃. Sb$_{2}$O$_{3}$ can be changed to spinel phase completely, and Bi$_{2}$O$_{3}$, ZnO may
be vaporized when the annealing temperature reaches 750℃. The ZnO--based ceramic
films with nonlinearity coefficient 20, ~nonlinear ~voltage ~5 V ~and ~the ~leakage ~current
~density 0.5 $\mu$A/mm$^{2}$ can be obtained by the proper annealing temperature.
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Received: 17 March 2005
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