|
|
|
| Synthesis and growth characteristics of well--aligned carbon nanotubes by ECR--CVD |
| ;; |
| 1.东北大学; 2.沈阳航空工业学院 |
|
Cite this article:
. Synthesis and growth characteristics of well--aligned carbon nanotubes by ECR--CVD. Chin J Mater Res, 2004, 18(4): 412-418.
|
|
|
Abstract Well--aligned carbon nanotubes (CNTs) were synthesized on porous silicon by
electron cyclotron resonance chemical vapor deposition (ECR--CVD).
CH$_{4}$ and H$_{2}$ were used as the source gases and Fe$_{3}$O$_{4}$
nanoparticle as the catalyst. The effects of process parameters
such as gas composition, working pressure, temperature and
deposition time on CNTs growing characteristics were investigated.
The morphology and structure were evaluated by scanning electron
microscopy (SEM), transmission electron microscopy (TEM) and Raman
spectrum. The results show that the gas composition and working
pressure influence the concentration of carbon radical in the
chamber, which may influence growth rate, density and aligned
growth of CNTs; The temperature controls the diameters of CNTs by
changing the size of catalyst but CNTs can’t tend to aligned
growth at lower temperature; CNTs become longer and longer
according to the deposition time first, but then stop growing
after a certain time.
|
|
Received: 01 September 2004
|
|
|
1 S.Iijima, Nature, 354, 56(1991)
2 B.Q.Wei, R.Vajtai, Y.Jung, J.Ward, R.Zhang, G.Ramanath, P.M.Ajayan, Nature, 416, 495(2002)
3 W.Z.Li, S.S.Xie, L.X.Qian, B.H.Chang, B.S.Zou, W.Y.Zhou, R.A.Zhao, G.Wang, Science, 274, 1701(1996)
4 S.S.Fan, M.G.Chapline, N.R.Franklin, T.W.Tombler, A.M.Cassell, H.J.Dai, Science, 283, 512(1999)
5 SHI Yifeng, QUAN Huijuan, ZHENG Guobin, Chinese Journal of Material Research, 17(3) , 321(2003) (施益峰,全慧娟,郑国斌,材料研究学报,17(3) , 321(2003) )
6 A.Huczko, Appl. Phys. A, 74, 617(2002)
7 P.J.Cao, Y.S.Gu, H.W.Liu, F.Shen, Y.G.Wang, Q.F.Zhang, J.L.Wu, H.J.Gao, J. Mater. Res., 7, 1686(2003)
8 Z.F.Ren, Z.P.Huang, J.W.Xu, J.H.Wang, P.Bush, M.P.Siegal, P.N.Provencio, Science, 282, 1105(1998)
9 Z.F.Ren, Z.P.Huang, D.Z.Wang, J.G.Wen, J.W.Xu, J.H.Wang, L.E.Calvet, J.Chen, J.F.Klemic, M.A.Reed, Appl. Phys. Lett., 75, 1086(1999)
10 Y.Chen, D.T.Shaw, L.P.Guo, Appl. Phys. Lett., 76, 2469(2000)
11 C.Bower, O.Zhou, W.Zhu, D.J.Werder, S.Jin, Appl. Phys. Lett., 77, 2767(2000)
12 J.S.Gao, K.Umeda, K.Uchino, H.Nakashima, K.Muraoka, Mater. Sci. Eng., A, 352, 308(2003)
13 C.M.Hsu, C.H.Lin, H.L.Chang, C.T.Kuo, Thin Solid Films, 420, 225(2002)
14 S.H.Tsai, F.K.Chiang, T.G.Tsai, F.S.Shieu, H.C.Shih, Thin Solid Films, 366, 11(2000)
15 SHEN Chengmin, SU Yikun, YANG Haitao, YANG Tianzhong, Acta Physica Sinica, 52(9) , 483(2003) (申承民,苏铁坤,杨海涛,杨天中,物理学报,52(9) , 483(2003) )
16 W.Z.Li, H.Zhang, C.Y.Wang, Y.Zhang, L.W.Xu, K.Zhu, S.S.Xie, Appl. Phys. Lett., 70, 2685(1997)
17 U.Kim, R.Pcionek, D.M.Aslam, D.Tomanek, Diamond. Relat. Mater., 10, 1947(2001) |
| No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
| |
Shared |
|
|
|
|
| |
Discussed |
|
|
|
|
