Progress on Application of Bias Technology for Preparation of Diamond Films

doi:10.11901/1005.3093.2021.287

Chinese Journal of Materials Research

2022, Vol. 36

Issue (3): 161-174 DOI: 10.11901/1005.3093.2021.287

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Progress on Application of Bias Technology for Preparation of Diamond Films

SHAO Siwu¹, ZHENG Yuting¹^,², AN Kang¹^,², HUANG Yabo¹, CHEN Liangxian¹, LIU Jinlong¹, WEI Junjun¹, LI Chengming¹(

)

^1.Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China
^2.Shunde Graduate School, University of Science and Technology Beijing, Guangdong 528399, China

Cite this article:

SHAO Siwu, ZHENG Yuting, AN Kang, HUANG Yabo, CHEN Liangxian, LIU Jinlong, WEI Junjun, LI Chengming. Progress on Application of Bias Technology for Preparation of Diamond Films. Chinese Journal of Materials Research, 2022, 36(3): 161-174.

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Abstract

In recent years, heteroepitaxial monocrystalline diamond has been grown by bias voltage technique and its size has been increased to over inch level. Since the application of bias can act as a means to significantly promote nuclear capability of diamound, therefore, the bias voltage technology may be used to prepare oriented diamond films, nano diamond films and ultra-nano diamond films etc. In this paper, the mechanism related with the action of bias technology, the forms and devices of bias technology, as well as the mechanism of surface reaction model, thermal peak model and sublayer injection model are reviewed. The commonly used bias techniques include DC bias, DC pulse bias, pulse overlap bias and bipolar pulse bias. The effect of bias voltage on the microstructure and properties of diamond films are also introduced, and the effect of applied bias voltage on the orientation growth, secondary nucleation rate, amorphous carbon-graphite-diamond phase transition, growth rate and bonding force of diamond films are described in detail. Biasing can change the energy of bombarded particles and the concentration of specific groups, affect the transformation of diamond phase and grain orientation and size, and then affect the optical, mechanical, thermal and electrical properties of diamond films. Some shortcomings in the present research work are also discussed, such as the mechanism related with the action of bias is still not clear, the change of electron concentration and the effect of hydrogen etching are still not clearly explained. Finally, the future research and application directions of bias voltage technology for diamond preparation are also prospected.

Key words: review chemical vapor deposition bias voltage diamond films heteroepitaxial growth

Received: 06 May 2021

ZTFLH:

TB34

Fund: National Key Research and Development Program of China(2018YFB0406500);National Key Research and Development Program of China(2016YFE0133200);European Union's Horizon 2020 Research and Innovation Staff Exchange (RISE) program(734578);Postdoctor Research Foundation of Shunde Graduate School of University of Science and Techonology Beijing(2020BH015)

About author: LI Chengming, Tel: (010)62332390, E-mail: chengmli@mater.ustb.edu.cn

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	Siwu SHAO
	Yuting ZHENG
	Kang AN
	Yabo HUANG
	Liangxian CHEN
	Jinlong LIU
	Junjun WEI
	Chengming LI

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https://www.cjmr.org/EN/10.11901/1005.3093.2021.287 OR https://www.cjmr.org/EN/Y2022/V36/I3/161

Fig.1 Schema of a plasma discharge and its modification during BEN^[30]

Fig.2 Reaction on the surface of silicon substrate during bias processing

Fig.3 Schema of how subplanted ions increase local density (a) and thermal spike introduced by ion subplantation (b)^[34]

Fig.4 Figure shows the pathway of conversion of diamond like clusters to diamond clusters^[36]

Fig.5 DC bias voltage (a), DC pulsed bias voltage (b), pulse superposition bias voltage (c) and bi-directional pulsed bias voltage (d)^[43]

Fig.6 Typical bias assisted CVD equipments^[44~47] (a) commercial Microwave Plasma CVD, (b) Antenna-Edge Microwave Plasma CVD, (c) Dc plasma CVD, (d) HFCVD system

Fig.7 Intensity distribution of several ion species for typical BEN conditions (P=25 mbar, T=800℃, MW power=900 W, U_bias=^{-200 V, 100 sccm H₂, 0.25 sccm CH₄) (a), total ion fluxes of different groups of ions as a function of bias voltage (b) CSum—the total flux of carbon containing C _x H _y⁺, HSum—the total flux of H_y⁺ and AllSum—the total measured ion flux^[51]}

Fig.8 Hetero-epitaxial nucleation process on Ir substrate under BEN: the ion bombardment induced-buried lateral growth mechanism^[11]

Fig.9 Nucleation density on Si vs bias voltage for 2%, 5%, and 15% methane concentration (a) and the nucleation density on Ir and the bias current vs bias voltage for 1% methane concentration (b)

Fig.10 Heteroepitaxial diamond growth on different substrate materials: (a) (100) 3C-SiC, (b) (100) β-SiC, (c) (100) Si, (d) (111) Pt, (e) (100) Ir, (f) (111) 3C-SiC^{[42, 58, 67, 68]}

Fig.11 Variation of the process time window for oriented nucleation of diamond on Si (001) with the bias voltage, Filled circles mark heteroepitaxial films, while empty triangles correspond to samples without preferential azimuthal alignment (a) and 10 μm thick diamond films after 15 min exposure to the biasing conditions U_bias= -200 V^[72] (b)

Fig.12 SEM micrographs of beg-NCD films grown under 0 V (a), -100 V (b), -200 V (c) and -300 V (d) with the inset showing the cross sectional SEM micrographs ^[73]

Fig.13 SEM micrographs with the insets showing the corresponding Raman spectra and HRTEM images for (a) (d) NUNCD_B10 films, (b) (e) NUNCD_B30 films, and (c) (f) NUNCD_B60 films, which were grown in N₂/CH₄ plasma under -250 V bias voltage for 10, 30, and 60 min, respectively^[72]

Fig.14 Microscopic images of Cross-sectional (a) and scratch tracks of UNCD/a-C films deposited at un-bias (c) and cross-sectional (b) and scratch tracks of UNCD/a-C films deposited at bias frequency of 40 kHz^[78] (d)

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