Etching Behavior of Tungsten under Irradiation of Low Energy and High Flux Hydrogen Ions

doi:10.11901/1005.3093.2020.126

Chinese Journal of Materials Research

2020, Vol. 34

Issue (9): 659-664 DOI: 10.11901/1005.3093.2020.126

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Etching Behavior of Tungsten under Irradiation of Low Energy and High Flux Hydrogen Ions

XUAN Jingfan, FAN Hongyu(

), BAI Ying, HU Ruihang, LI Xinyang, TAO Wenchen, NI Weiyuan(

), NIU Jinhai

Liaoning Key Laboratory of Plasma Technology, Dalian Minzu University, Dalian 116600, China

Cite this article:

XUAN Jingfan, FAN Hongyu, BAI Ying, HU Ruihang, LI Xinyang, TAO Wenchen, NI Weiyuan, NIU Jinhai. Etching Behavior of Tungsten under Irradiation of Low Energy and High Flux Hydrogen Ions. Chinese Journal of Materials Research, 2020, 34(9): 659-664.

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Abstract

Regarding to conditions of the fusion-related tungsten (W) divertor, the etching behavior of polycrystalline W under the irradiation of low-energy and high-flux hydrogen ions, namely the flux of ca 10²² ions/m²·s, dose of 1.0×10²⁶ ions/m²and energy of 5~200 eV was investigated by means of scanning electron microscopy SEM with EBSD and conductive atomic force microscopy. The findings suggest that the sputtering yield of W is strongly dependent on the ions energy, the sputtering rate increases rapidly with the increase of H ions energy; After irradiation, a texture of parallel stripes with a special orientation for every grain may emerge on the irradiated surface, but the distribution of defects on both sides of every stripe is obviously different, which means that the etching of W surface is preferentially occur along a certain face of W crystal grains.

Key words: metallography polycrystalline tungsten H ions irradiation erosion

Received: 17 April 2020

ZTFLH:

TG14

Fund: National Natural Science Foundation of China(11405023);Natural Science Foundation of Liaoning Province(20180510006);Natural Science Foundation of Liaoning Province(2019-ZD-018);Dalian Science and Technology Star Project(2017RQ149);College Students Innovation Training Project of Dalian Minzu University(202012026596);“Taiyangniao” Student Research Project of Dalian Minzu University(tyn2020302)

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	Jingfan XUAN
	Hongyu FAN
	Ying BAI
	Ruihang HU
	Xinyang LI
	Wenchen TAO
	Weiyuan NI
	Jinhai NIU

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https://www.cjmr.org/EN/10.11901/1005.3093.2020.126 OR https://www.cjmr.org/EN/Y2020/V34/I9/659

Fig.1 OES spectrum of H₂ plasma

Fig.2 SEM images of W specimens irradiated at different H ion energy (a) 0 eV, (b) 5 eV, (c) 20 eV, (d) 40 eV, (e) 60 eV, (f) 100 eV, (g) 150 eV and (h) 200 eV

Fig.3 irradiated at E=200 eV, and its corresponding EBSD mapping (a) low magnification SEM map, (b) EBSD map of (a), (c) local high magnification SEM map, and (d) EBSD map of (c)

Fig.4 W sputtering yields as a function of H ion energy.

Fig.5 CAFM analysis of the surface topography (left) and the simultaneously measured current images (right) of W irradiated with different H ion energy (a) 0 eV, (b) 20 eV, (c) 40 eV and (d) 60 eV

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