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| The Influence of Sulfurization Temperature on the Properties of Cu2ZnSnS4 Thin Films |
| XIE Min ZHUANG Daming** LIU Jiang GUO Li SONG Jun |
(Key Lab of Advanced Processing and Manufacturing, Ministry of Education,
School of Material Science and Engineering, Tsinghua University, Beijing 100084) |
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Cite this article:
XIE Min, ZHUANG Daming, LIU JiangGUO, LiSONG Jun. The Influence of Sulfurization Temperature on the Properties of Cu2ZnSnS4 Thin Films. Chinese Journal of Materials Research, 2013, 27(2): 126-130.
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Abstract The CZTS thin films were fabricated by sulfurization of sputtered CZT precursors, vulcanized at 350, 400, 450, 500 and 550 ℃ respectively, characterized through the analyses of XRD, XRF, SEM and Raman spectrum, and the influences of sulfurization temperature on the compositional and structural properties of CZTS thin films were investigated. The results show that the sulfurization process did not occur in the films sulfurized at the temperature of less than 400 ℃. Instead, the main change in the films was the inter-diffusion of the alloying elements, accompanying with the appearance of tiny amount of Sn3S4 and ZnS. CZTS appeared in films sulfurized at 450 ℃ while a quantity of SnS also existed in the films. For films sulfurized at 500 ℃, principal phase is CZTS with grain size of almost 2 μm, yet with a high surface roughness at the same time. For films sulfurized at 550 ℃, CZTS thin films with grain size around 2 μm and smooth surface were obtained.
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