Properties of ZnO Varistor Ceramics Co-doped with B2O3 and Al2O3

doi:10.11901/1005.3093.2020.208

Chinese Journal of Materials Research

2021, Vol. 35

Issue (2): 110-114 DOI: 10.11901/1005.3093.2020.208

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Properties of ZnO Varistor Ceramics Co-doped with B₂O₃ and Al₂O₃

WANG Hao¹, ZHAO Hongfeng¹(

), KANG Jiashuang¹, ZHOU Yuanxiang², XIE Qingyun³

^1.The Wind Solar Storage Division of State Key Laboratory of Control and Simulation of Power System and Generation Equipment, School of Electrical Engineering, Xinjiang University, Urumqi 830046, China
^2.State Key Laboratory of Power System and Power Generation Equipment Control and Simulation, Department of Electrical Engineering and Applied Electronics Technology, Tsinghua University, Beijing 100084, China
^3.Xidian Surge Arrester Co. Ltd. , Xi'an 710200, China

Cite this article:

WANG Hao, ZHAO Hongfeng, KANG Jiashuang, ZHOU Yuanxiang, XIE Qingyun. Properties of ZnO Varistor Ceramics Co-doped with B₂O₃ and Al₂O₃. Chinese Journal of Materials Research, 2021, 35(2): 110-114.

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Abstract

The effect of B₂O₃ (B) and Al₂O₃ (Al) co-doping on electrical properties and microstructure of ZnO varistor ceramics are investigated. ZnO varistors doped with B and Al have excellent electrical properties such as low leakage current, high nonlinearity and low residual voltage. The electrical parameters of the ZnO varistor ceramics doped with 3.0% B and 0.015% Al(mole fraction)are as follows: breakdown voltage E_{1 mA}=475 V/mm; leakage current J_L=0.16 μA/cm²; nonlinear coefficient α=106; residual voltage ratio K=1.57.

Key words: inorganic non-metallic materials ZnO varistor ceramics electrical properties microstructure

Received: 02 June 2020

ZTFLH:

TM283

Fund: National Natural Science Foundation of China(51762038)

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	Hao WANG
	Hongfeng ZHAO
	Jiashuang KANG
	Yuanxiang ZHOU
	Qingyun XIE

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https://www.cjmr.org/EN/10.11901/1005.3093.2020.208 OR https://www.cjmr.org/EN/Y2021/V35/I2/110

B content /%, mole fraction	d / $μ$ m	N_d /10²⁷m^-3	N_i /10¹⁸m^-2	$Φ b$ /eV	E_b /V·mm^-1	J_L /μA·cm^-2	α	K	Grain boundary resistance/kΩ
0.0	6.58	1.86	1.81	1.66	470	4.06	51	1.57	29.69
1.5	6.61	1.98	2.03	1.98	474	2.52	67	1.58	45.14
3.0	6.62	2.59	2.86	2.98	475	0.16	106	1.57	74.68
4.5	6.66	2.23	2.27	2.17	479	0.25	86	1.59	52.53

Table 1 Electrical properties and microstructure parameters of samples with different B doping amounts

Fig.1 E-J diagrams of samples with different B doping amounts: (a) E-J curve and (b) enlarged view at inflection point

Fig.2 C-V curves of samples with different B doping amounts (mole fraction)

Fig.3 SEM images of samples with different B doping amounts (a) 0.0%, (b) 1.5%, (c) 3.0%, (d) 4.5%

Fig.4 Energy-dispersive X-ray spectral image of a typical sample: (a) measurement path and (b) element intensity

Fig.5 Density-non-linear line graph of samples with different B doping levels

Fig.6 XRD diffraction patterns of samples with different B doping amounts

Fig.7 Impedance equivalent circuit diagram (a) and complex impedance image of samples with different B doping amounts (b)

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