Effect of Copper Foil Surface Morphology on the Quality of Graphene Grown by CVD

doi:10.11901/1005.3093.2015.422

Chinese Journal of Materials Research

2016, Vol. 30

Issue (4): 255-262 DOI: 10.11901/1005.3093.2015.422

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Effect of Copper Foil Surface Morphology on the Quality of Graphene Grown by CVD

SONG Ruili¹, LIU Ping^2,^**(

), ZHANG Ke², LIU Xinkuan², CHEN Xiaohong²

1. School of Mechanical Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
2. School of Materials Science and Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China

Cite this article:

SONG Ruili, LIU Ping, ZHANG Ke, LIU Xinkuan, CHEN Xiaohong. Effect of Copper Foil Surface Morphology on the Quality of Graphene Grown by CVD. Chinese Journal of Materials Research, 2016, 30(4): 255-262.

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Abstract

High-quality and few-layered graphene was grown by chemical vapor deposition (CVD) on copper foils, which were pre-treated by etching with 25%HCl or 2 mol/L FeCl₃and then electrochemical polishing in order to improve their surface smoothness. The surface morphology of the copper foils and the deposited graphene were characterized by means of Raman spectroscopy, XRD and SEM etc. The results showed that copper foils with desired surface smoothness would be acquired through etching with 2 mol/L FeCl₃ for 30 s and then electrochemical polishing for 60 s by applied voltage of 10 V; Films of layered graphene with less defects could be deposited on the pre-treated copper foils. The thickness of graphene films increased with the increasing time, however for a short deposition time the formed graphene films were discontinuous with poor quality. The monolayered high-quality graphene films could be prepared by depositing for 30 s, whilst the deposition time increased to 60 s a graphite film could form on the surface. In other word, it is necessary to control the deposition on time for growing the desired monolayered graphene films.

Key words: inorganic non-metallic materials copper foil graphene CVD quality

Received: 27 July 2015

ZTFLH:

TB331

Fund: Supported by Youth Fund of National Natural Science Foundation Project No. 51301106

About author: To whom correspondence should be addressed, Tel:18221916398, E-mail:liuping@usst.edu.cn

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	Ruili SONG
	Ping LIU
	Ke ZHANG
	Xinkuan LIU
	Xiaohong CHEN

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https://www.cjmr.org/EN/10.11901/1005.3093.2015.422 OR https://www.cjmr.org/EN/Y2016/V30/I4/255

Fig.1 Model diagram of graphene growth mechanism on rough copper foil surface, (a) dissociation of hydrocarbon on heated copper foil surface, (b) nucleation and growth of graphene, (c) reaction termination, (d) final graphene and final amorphous carbon on the rough surface of copper foil

Fig.2 XRD and SEM characterization of copper foils before and after annealing, (a) copper foils before annealing, (b) copper foils after annealing, (c) copper foils before annealing, (d) copper foils after annealing

Fig.3 SEM images of copper foils treated by different processing conditions, (a)washed by 25% HCl for 10 min, (b) to (d) etched by 2 mol/L FeCl₃ for 15 s, 30 s and 45 s respectively, (e) to (g) electrochemically polished at 10 voltage for 20 s, 40 s, 60 s and 80 s respectively

Fig.4 Raman characterization of graphene on copper foils treated by different conditions

Table 1 Raman data of graphene on copper foils treated by different conditions

Fig.5 SEM characterization of graphene grown on copper foils electrochemically polished at 10 V for 60 s, (a) to (d) graphene growth time of 15 s, 30 s, 45 s and 60 s, (e) polarizing microscope imagines of graphene growth time of 30 s

Fig.6 Raman spectra of graphene grown on copper foils electrochemically polished at 10 V for 60 s, (a) graphene of growth time of 15 s, 30 s, 45 s and 60 s (transferred to SiO₂/Si substrate), (b) 2D peak corresponding to Fig.a, (c) curve fitted by the Lorenz function of growth time of 30 s of Fig.a

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