Al预沉积层对金属有机物化学气相沉积方法在Si衬底上生长AlN缓冲层和GaN外延层的影响

doi:10.11901/1005.3093.2020.159

材料研究学报

2020, Vol. 34

Issue (10): 744-752 DOI: 10.11901/1005.3093.2020.159

研究论文

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Al预沉积层对金属有机物化学气相沉积方法在Si衬底上生长AlN缓冲层和GaN外延层的影响

甄龙云¹, 彭鹏², 仇成功¹, 郑蓓蓉¹, Armaou Antonios¹^,³, 钟蓉¹(

)

1.温州大学机电工程学院温州 325035
2.陕西电子集成电路先导技术研究院有限责任公司西安 710119
3.Department of Chemical Engineering, Pennsylvania State University, University Park 16802, USA

Effect of Pre-deposited Al Layer on Growth of AlN Buffer Layer and GaN Film on Si Substrate by Metal-organic Chemical Vapor Deposition

ZHEN Longyun¹, PENG Peng², QIU Chenggong¹, ZHENG Beirong¹, ARMAOU Antonios¹^,³, ZHONG Rong¹(

)

1. College of Electricity and Mechanics, Wenzhou University, Wenzhou 325035, China
2. Shaanxi Institute of Advanced Optoelectronic Integrated Circuit Technologies, Xi'an 710119, China
3. Department of Chemical Engineering, Pennsylvania State University, University Park 16802, USA

引用本文:

甄龙云, 彭鹏, 仇成功, 郑蓓蓉, Armaou Antonios, 钟蓉. Al预沉积层对金属有机物化学气相沉积方法在Si衬底上生长AlN缓冲层和GaN外延层的影响[J]. 材料研究学报, 2020, 34(10): 744-752.
Longyun ZHEN, Peng PENG, Chenggong QIU, Beirong ZHENG, Antonios ARMAOU, Rong ZHONG. Effect of Pre-deposited Al Layer on Growth of AlN Buffer Layer and GaN Film on Si Substrate by Metal-organic Chemical Vapor Deposition[J]. Chinese Journal of Materials Research, 2020, 34(10): 744-752.

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摘要:

采用金属有机物化学气相沉积法(MOCVD)在硅(Si)衬底制备铝/氮化铝/氮化镓(Al/AlN/GaN)多层薄膜，使用光学显微镜(OM)、原子力显微镜(AFM)、X射线衍射(XRD)等手段表征AlN和GaN薄膜的微观结构和晶体质量，研究了TMAl流量对AlN薄膜和GaN薄膜的形核和生长机制的影响。结果表明，预沉积Al层能促进AlN的形核和生长，进而提高GaN外延层的薄膜质量。TMAl流量太低则预沉积Al层不充分，AlN缓冲层的质量取决于由形核长大的高结晶度AlN薄膜与在气氛中团聚长大并沉积的低结晶度AlN薄膜之间的竞争，AlN薄膜的质量随着TMAl流量的升高而提高，GaN薄膜的质量也随之提高。TMAl流量太高则预沉积Al层过厚，AlN缓冲层的质量取决于由形核长大的高结晶度AlN薄膜与Al-Si回融蚀刻之间的竞争，AlN薄膜的质量随着TMAl流量的升高而降低，GaN薄膜的质量也随之降低。

关键词 ：材料表面与界面, 生长机制, 金属有机物化学气相沉积, Al预沉积, Si衬底, GaN薄膜

Abstract：

Multilayered films of Al/AlN/GaN were deposited on a Si wafer by metal-organic chemical vapor deposition (MOCVD). The microstructure and crystallinity were characterized by means of optical microscopy (OM), atomic force microscopy (AFM) and X-ray diffractometer (XRD), especially in terms of the mechanisms of nucleation and growth of the produced AlN and GaN films with the variations of trimethylaluminum (TMAl) flow during Al pre-deposition process. It was observed that the pre-deposited Al layer helps the nucleation and growth of AlN film and thereafter improves the quality of GaN film. When a thin Al layer was deposited at low TMAl flow, the quality of the AlN film depends on the competition between the nucleation and growth of the high crystallinity AlN thin film with the deposition of the formed clasters of low crystallinity AlN in the gas phase on the surface of silicon wafer. The quality of the AlN film increases with increasing TMAl flow, inducing the formation of GaN film with better quality. When the Al layer is too thick at high TMAl flow, the quality of the AlN film depends on the competition between the nucleation and growth of the high crystallinity AlN thin film with the meltback-etching of Al-Si on the wafer surface. The quality of the AlN film decreases with increasing TMAl flow, inducing the formation of GaN film with worse quality.

Key words： surface and interface in the materials growth mechanism MOCVD Al pre-deposition Si substrate GaN film

收稿日期: 2020-05-12

ZTFLH:

O484.4

基金资助:国家重点研发计划项目-政府间国际科技创新合作重点专项(2016YFE0105900)

作者简介: 甄龙云，男，1994年生，硕士生

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https://www.cjmr.org/CN/10.11901/1005.3093.2020.159 或 https://www.cjmr.org/CN/Y2020/V34/I10/744

图1 TMAl流量分别为 0 sccm、41.5 sccm、59.5 sccm和77.5 sccm预沉积Al层后在Si衬底上生长的AlN薄膜的AFM照片

图2 TMAl流量不同的AlN薄膜的均方根粗糙度RRMS

图3 TMAl流量不同的预沉积Al层，相应AlN (002)面的XRD摇摆曲线的强度及其半高宽

图4 TMAl流量分别为 0 sccm、41.5 sccm、59.5 sccm和77.5 sccm的GaN薄膜的OM照片

图5 采用不同TMAl流量预沉积Al层时相应GaN (0002)面的XRD摇摆曲线的强度及其半高宽

Type & No.	Reaction
G1	$A l C H 3 3 2 → 2 A l C H 3 3$
G2	$A l C H 3 3 → A l C H 3 2 + C H 3$
G3	$A l C H 3 2 → A l C H 3 + C H 3$
S1	$A l C H 3 3 + S → A l S + 3 C H 3$
S2	$A l C H 3 2 + S → A l S + 2 C H 3$
S3	$A l C H 3 + S → A l S + C H 3$

表1 不预沉积Al层时气相-表面的化学反应

Type & No.	Reaction
G4	$A l C H 3 3 + N H 3 → C H 3 3 A l : N H 3$
G5	$C H 3 3 A l : N H 3 → A l C H 3 3 + N H 3$
G6	$C H 3 3 A l : N H 3 → A l C H 3 2 : N H 2 + C H 4$
G7	$C H 3 2 A l : N H 2 → A l N G + 2 C H 4$
S4	$A l S + N H 3 + 3 C H 3 → A l N S + 3 C H 4$
S5	$x A l S + y S i S → A l x S i y S$
S6	$2 x S i S + 2 y N H 3 → 2 S i x N y S + 3 y H 2$
S7	$A l N G + 2 S → A l N S$

表2 生长AlN缓冲层时气相-表面的化学反应

Type & No.	Reaction
G8	$G a C H 3 3 → G a C H 3 2 + C H 3$
G9	$G a C H 3 2 → G a C H 3 + C H 3$
G10	$G a C H 3 3 + N H 3 → C H 3 3 G a : N H 3$
G11	$C H 3 3 G a : N H 3 → G a C H 3 3 + N H 3$
G12	$C H 3 3 G a : N H 3 → G a C H 3 2 : N H 2 + C H 4$
G13	$C H 3 2 G a : N H 2 → G a N G + 2 C H 4$
S8	$G a C H 3 3 + S → G a S + 3 C H 3$
S9	$G a C H 3 2 + S → G a S + 2 C H 3$
S10	$G a C H 3 + S → G a S + C H 3$
S11	$G a S + N H 3 + 3 C H 3 → G a N S + 3 C H 4$
S12	$x G a S + y S i S → G a x S i y S$
S13	$2 x S i S + 2 y N H 3 → 2 S i x N y S + 3 y H 2$
S14	$G a N G + 2 S → G a N S$

表3 生长GaN缓冲层时气相-表面的化学反应

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