溅射沉积掺<strong>Ag</strong>的<strong>SnSe</strong>薄膜的微结构和热电性能

doi:10.11901/1005.3093.2020.021

材料研究学报

2020, Vol. 34

Issue (8): 561-568 DOI: 10.11901/1005.3093.2020.021

研究论文

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溅射沉积掺Ag的SnSe薄膜的微结构和热电性能

李贵鹏¹, 宋贵宏¹(

), 胡方¹, 杜昊², 尹荔松³

1 沈阳工业大学材料科学与工程学院沈阳 110870
2 中国科学院金属研究所材料表面工程研究部沈阳 110015
3 五邑大学智能制造学部江门 520920

Structure and Thermoelectric Properties of Ag-doped SnSe Thin Films Deposited by Magnetron Sputtering

LI Guipeng¹, SONG Guihong¹(

), HU Fang¹, DU Hao², YIN Lisong³

1 School of Materials Science and Engineering, Shenyang University of Technology, Shenyang 110870, China
2 Division of Surface Engineering of Materials, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110015, China
3 Faculty of Intelligent Manufacturing, Wuyi University, Jiangmen 520920, China

引用本文:

李贵鹏, 宋贵宏, 胡方, 杜昊, 尹荔松. 溅射沉积掺Ag的SnSe薄膜的微结构和热电性能[J]. 材料研究学报, 2020, 34(8): 561-568.
Guipeng LI, Guihong SONG, Fang HU, Hao DU, Lisong YIN. Structure and Thermoelectric Properties of Ag-doped SnSe Thin Films Deposited by Magnetron Sputtering[J]. Chinese Journal of Materials Research, 2020, 34(8): 561-568.

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摘要:

使用粉末烧结SnSe合金靶高真空磁控溅射制备掺杂Ag的SnSe热电薄膜，利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)和能谱仪(EDS)等手段分析薄膜的相组成、表面形貌、截面形貌、微区元素含量和元素分布，利用塞贝克系数/电阻分析系统LSR-3测量沉积薄膜的电阻率和Seebeck系数，研究了不同Ag含量SnSe薄膜的热电性能。结果表明，采用溅射技术可制备出正交晶系Pnma结构的SnSe相薄膜，掺杂的Ag在薄膜中生成了纳米Ag₃Sn。与未掺杂Ag相比，掺杂Ag的SnSe薄膜其电阻率和Seebeck系数(绝对值，下同)明显减小。并且在一定掺杂范围内，掺杂Ag越多的薄膜电阻率和Seebeck系数越小。未掺杂Ag的SnSe薄膜样品，其Seebeck系数较大但是电阻率也大，因此功率因子较小。Ag掺杂量(原子分数)为7.97%的样品，因其Seebeck系数绝对值较大而电阻率适当，280℃时的功率因子最大(约为0.93 mW·m^-1·K^-2)，比未掺杂Ag的样品(PF=0.61 mW·m^-1·K^-2)高52%。掺杂适量的Ag能提高溅射沉积的SnSe薄膜的热电性能(功率因子)。

关键词 ：材料表面与界面, 热电材料, SnSe薄膜, 掺杂Ag, Seebeck系数, 电阻率, Ag₃Sn相

Abstract：

Ag-doped SnSe thermoelectric thin films were deposited by high vacuum magnetron sputtering using a powder sintered SnSe alloy target. The influence of Ag-doping on the surface and cross sectional morphology, phase composition and thermoelectric properties of the SnSe thin films were investigated by means of X-ray diffractometer (XRD), scanning electron microscopy (SEM) and energy dispersive spectrometer (EDS), as well as Seebeck coefficient/resistance analysis system LSR-3. The results show that the SnSe films are composed of SnSe phase of orthorhombic Pnma structure. The nano-sized Ag₃Sn phase exists in the films with Ag-doping. Compared with the film without Ag-doping, the resistivity and absolute value of Seebeck coefficient of the SnSe films with Ag-doping decrease significantly. In a certain doping range, the more Ag-doping is, the smaller the resistivity and the absolute value of the Seebeck coefficient are. Although the absolute value of the Seebeck coefficient of undoped films is high and the resistivity is relatively large, so the power factor is small. For the film with 7.97% Ag (in atomic fraction), the power factor reaches the maximum at 280℃ due to higher Seebeck coefficient absolute value and appropriate resistivity, accordingly, the maximum power factor is about 0.93 mW·m^-1·K^-2 at 280℃, which is 40% higher than that of undoped films (PF=0.61 mW·m^-1·K^-2). In conclusion, the appropriate amount of Ag-doping can effectively improve the thermoelectric properties (power factor) of the SnSe thin films by magnetron sputtering.

Key words： surface and interface in the materials thermoelectric materials SnSe films Ag doping Seebeck coefficient resistivity Ag₃Sn phase

收稿日期: 2020-01-16

ZTFLH:

O613.52

基金资助:国家自然科学基金(51772193);广东省重点领域研发计划(2106B01013003)

作者简介: 李贵鹏，男，1992年生，博士生

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https://www.cjmr.org/CN/10.11901/1005.3093.2020.021 或 https://www.cjmr.org/CN/Y2020/V34/I8/561

表1 不同Ag掺杂量SnSe薄膜的成分

图1 不同Ag含量(原子分数)SnSe薄膜的XRD谱、局部XRD谱和掺4.42%Ag样品的元素分布图

表2 不同Ag含量沉积SnSe薄膜试样衍射峰峰的半高宽、衍射角及晶粒尺寸

图2 不同Ag含量SnSe薄膜的表面形貌

图3 不同Ag含量SnSe薄膜的截面形貌

图4 不同Ag含量SnSe薄膜的电阻率与温度的关系

图5 不同Ag含量SnSe薄膜的Seebeck系数与温度的关系

图6 不同Ag含量SnSe薄膜的功率因子与温度的关系

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