自旋阀多层膜磁化翻转场的调控和磁电阻特性

doi:10.11901/1005.3093.2019.330

材料研究学报

2020, Vol. 34

Issue (4): 272-276 DOI: 10.11901/1005.3093.2019.330

研究论文

本期目录 | 过刊浏览

自旋阀多层膜磁化翻转场的调控和磁电阻特性

谭稀, 宋玉哲, 史鑫, 强进, 魏廷轩, 卢启海(

)

甘肃省科学院传感技术研究所甘肃省传感器与传感技术重点实验室兰州 730000

Magnetization Reversal Field and Magneto-Resistor of Spin Valve

TAN Xi, SONG Yuzhe, SHI Xin, QIANG Jin, WEI Tingxuan, LU Qihai(

)

Key Laboratory of Sensor and Sensing Technology of Gansu Province, Institute of Sensor Technology, Gansu Academy of Sciences, Lanzhou 730000, China

引用本文:

谭稀, 宋玉哲, 史鑫, 强进, 魏廷轩, 卢启海. 自旋阀多层膜磁化翻转场的调控和磁电阻特性[J]. 材料研究学报, 2020, 34(4): 272-276.
Xi TAN, Yuzhe SONG, Xin SHI, Jin QIANG, Tingxuan WEI, Qihai LU. Magnetization Reversal Field and Magneto-Resistor of Spin Valve[J]. Chinese Journal of Materials Research, 2020, 34(4): 272-276.

全文: PDF(2885 KB) HTML

摘要:

用磁控溅射方法制备Ta/CoFe/Fe/Au/Fe/IrMn/Ta和Ta/CoFe¹/Au/CoFe²/IrMn/Ta两种多层膜结构的自旋阀，并优化各功能层的溅射参数有效调控了磁化翻转场和磁电阻特性。根据TEM确定了样品多层膜的微观结构和膜厚，使用VSM和加磁场四探针法分别测量了样品的磁滞回线和磁电阻(MR)特性曲线。结果表明，样品中隔离层Au的厚度与MR值之间存在振荡衰减的关系；而钉扎层、自由层和被钉扎层的厚度直接影响各膜层的矫顽力和饱和磁化强度等磁学性能，进而改变MR值。各层厚度为6/6/3.8/6/9/6 nm的Ta/CoFe¹/Au/CoFe²/IrMn/Ta结构自旋阀，具有最佳的MR值。

关键词 ：金属基复合材料, 自旋阀, 磁控溅射, 磁电阻

Abstract：

Two kinds of spin valve composed of multilayered films of Ta/CoFe/Fe/Au/Fe/IrMn/Ta and Ta/CoFe¹/Au/CoFe²/IrMn/Ta were deposited respectively on oxidized silicon wafer by high vacuum magnetron sputtering. Their magneto-resistor characteristics and magnetization reversal fields were tailored by selectively adjusting the processing parameters for each of the function layers. The microstructure and thickness of the multilayered films were characterized by means of TEM. The hysteresis loops and magneto resistance (MR) curves were measured by VSM and four-probe measurement tests. Results show that there exists a relationship of vibration attenuation for the MR values with the thickness of the middle isolation layer Au. Namely, with the increase of the thickness of the Au layer, the vibration attenuation weakened. The coercive force and saturation magnetization of the multilayered films were determined by the thickness of each different function layers, which then alter the MR values directly. There was a best MR value for the multilayered structure of Ta/CoFe¹/Au/CoFe²/IrMn/Ta with the following film thickness for each layer: 6/6/3.8/6/9/6 nm.

Key words： metal matrix composites spin valve magnetron sputtering magneto-resistor

收稿日期: 2019-07-05

ZTFLH:

TM271

基金资助:国家自然科学基金地区科学基金(No. 51761001);甘肃省科学院青年科技创新基金(No. 2017QN-02);甘肃省自然科学基金(No. 17JR5RA180);甘肃省科学院应用研究与开发项目(No. 2018JK-16);甘肃省科学院创新团队建设项目(No. 2020CX005-01);兰州市人才创新创业项目(No. 2016-RC-80);2018年度“西部青年学者”项目

作者简介: 谭稀，女，1991年生，硕士

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表1 典型样品的溅射工艺参数

图1 样品I的横截面的TEM图

图2 不同Au层厚度对样品II系列自旋阀磁电阻的影响

图3 样品III系列自旋阀的磁滞回线和磁阻特性曲线

图4 样品IV系列自旋阀的磁滞回线和磁阻特性曲线

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