Understanding the material removal mechanism during the sliding wear process of β-SiC materials from an atomic scale perspective will helpful reduce the occurrence of adhesive contact failure and wear in micro-electromechanical system devices. Therefore, the influence of abrasive radius, depth of pressing, sliding speed, service temperature and substrate crystal plane etc. on the SiC microstructure evolution and material removal behavior during the sliding wear of β-SiC materials was studied by means of molecular dynamics method. Results show that the atomic-scale removal mechanism of β-SiC materials in sliding wear lies in the fact that the abrasive grains and the extrusion zone are affected by the dual coupling of high stress and high temperature. It is very easy for the material to be continuously removed from the surface under the induction of horizontal friction force, resulting in the accumulation of grinding debris in front of the abrasive grains and on both sides of the edge of the close contact zone. As the service temperature and pressure depth increase, the number of wear chip atoms produced by wear also increases. However, as the sliding speed increases, the accumulation of wear atoms in front of the abrasive grains and on both sides of the contact edge indeed decreases. Furthermore, the plastic deformation in sliding wear of β-SiC is mainly dominated by the nucleation, growth, proliferation and sliding of dislocations from the cubic crystal structure to the sphalerite crystal structure and within the substrate. Moreover, the concentration degree of Von Mises stress distribution in the β-SiC substrate is positively correlated with the regions where dislocation defects occur within the substrate. The results show that in sliding wear, with the increase of abrasive radius, depth of pressing and sliding speed, the larger the peak value of the radial distribution function, the more amorphous atoms will be produced by β-SiC. However, as the service temperature rises, the number of amorphous atoms produced by β-SiC indeed decreases. In addition, the crystal plane selectivity of the β-SiC substrate has significant anisotropic characteristics for the horizontal friction force, microstructure evolution, wear chip number, atomic vector displacement, temperature field and stress field distribution in sliding wear.