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材料研究学报  2003, Vol. 17 Issue (6): 654-658    
  论文 本期目录 | 过刊浏览 |
垂直布里奇曼法CdZnTe晶体生长过程的数值分析
刘俊成1;谷智2 ;介万奇2
1.山东理工大学; 2.西北工业大学
引用本文:

刘俊成; 谷智; 介万奇 . 垂直布里奇曼法CdZnTe晶体生长过程的数值分析[J]. 材料研究学报, 2003, 17(6): 654-658.

全文: PDF(1033 KB)  
摘要: 模拟计算了半导体材料CdZnTe布里奇曼法单晶体生长过程,分析了熔体的过热温度、坩埚侧面强化换热以及坩埚加速旋转(ACRT)等因素对结晶界面的形态和晶体组分偏析的影响. 结果表明:当熔体的过热温度减小时, 熔体中自然对流的强度显著降低,固液界面的凹陷深度有所增加, 晶体的轴向等浓度区显著加长,而晶体组分的径向偏析明显增大. 坩埚的侧面强化换热增加了自然对流强度,也增大了固液界面的凹陷, 但是对溶质成分的偏析影响较小.坩埚加速旋转引起的强迫对流强度远大于自然对流,显著增大了固液界面的凹陷, 使熔体中的溶质分布成为均一的浓度场,显著减小了晶体组分的径向偏析, 增加了晶体组分的轴向偏析.
关键词 材料科学基础学科晶体生长数值模拟     
Key words
收稿日期: 1900-01-01     
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