Microstructure and optical properties of Si nanocrystals embedded in SiO2 film

Chin J Mater Res

2009, Vol. 23

Issue (4): 352-356 DOI:

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Microstructure and optical properties of Si nanocrystals embedded in SiO₂film

WANG Yiqian¹; LIANG Wenshuang¹; ROSS Guy²

1.The Cultivation Base for State Key Laboratory; Qingdao University; No.308; Ningxia Road; Qingdao; 266071
2.INRS-EMT; 1650 boulevard Lionel-Boulet; Varennes; Canada; J3X 1S2

Cite this article:

WANG Yiqian LIANG Wenshuang ROSS Guy. Microstructure and optical properties of Si nanocrystals embedded in SiO₂film. Chin J Mater Res, 2009, 23(4): 352-356.

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Abstract

Si nanocrystals have been fabricated in SiO₂ film using ion implantation followed by high-temperature annealing. The microstructure and optical properties of the samples with different Si⁺ implantation doses were investigated, and the growth mechanism and light emission mechanism were explored. The experimental results indicated that for small Si nanocrystals (<5 nm), the growth mechanism conforms to Ostwald ripening; while for the big ones (>10 nm), the coalescence of small nanoparticles through twinning is dominant. The
photoluminescence (PL) investigation showed that the PL spectrum intensity from the sample with an implantation dose of 3 ×10¹⁷/cm²dropped by a factor of 5 compared with that from the sample with an implantation dose of 8×10¹⁶/cm² . The correlation between microstructure and PL indicated that the microstructural defects, such as twinning and stacking faults inside the Si nanocrystals have a great influence on the PL intensity.

Key words: inorganic non-metallic materials Si nanocrystals transmission electron microscopy growth mechanism photoluminescence

Received: 08 January 2009

ZTFLH:	O472
	O483

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Supported by the Scientific Research Funding for the Introduced Talents at Qingdao University No.06300701 and National Science and Engineering Research Council, Canada No. STPGP307205-04.

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