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| High–temperature thermal stability research on SiC thin films by magnetron sputtering |
| ZHU Yuankun1; ZHU Jiaqi1; HAN Jiecai1; LIANG Jun1; ZHANG Yuanchun2 |
1.Center for Composite Materials; Harbin Institute of Technology; Harbin 150001
2.China Automobile Industry Engineering Cooperation; Tianjin 300190 |
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Cite this article:
ZHU Yuankun ZHU Jiaqi HAN Jiecai LIANG Jun ZHANG Yuanchun. High–temperature thermal stability research on SiC thin films by magnetron sputtering. Chin J Mater Res, 2009, 23(4): 410-414.
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Abstract SiC thin films were grown on Si substrates by magnetron sputtering. The structural and component changes of the films, pre and post high temperature annealing at different temperature and atmosphere conditions, were studied. The results show that the films are characterized by the amorphous microstructure and mainly composed of Si–C bondings, C–C bondings as well as a small mount of oxide impurity consorted with Si; the content of the C–C bondings decreased after annealing in vacuum, meanwhile the Si–C bondings content increased, annealing in vacuum is beneficial to the formation of SiC; after annealing at 800℃ in air, a thin dense layer of SiO2 formed on the surface, which prevented the oxygen from contacting with the film and effectively protected the inner SiC from oxidizing. SiC films have good thermal stability at 800℃ in air.
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Received: 05 December 2008
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| Fund: Supported by National High Technology Research and Development Program of China No.2006AA0764. |
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