Influence of Annealing Temperature on Electric Properties of CuIn1-xGaxSe2 Thin Films

doi:10.11901/1005.3093.2014.233

Chinese Journal of Materials Research

2014, Vol. 28

Issue (10): 745-750 DOI: 10.11901/1005.3093.2014.233

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Influence of Annealing Temperature on Electric Properties of CuIn_1-_xGa_xSe₂ Thin Films

Liangqi OUYANG,Ming ZHAO,Daming ZHUANG(

),Rujun SUN,Li GUO,Xiaolong LI,Mingjie CAO

Key Laboratory for Advanced Materials Processing Technology of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing 100084

Cite this article:

Liangqi OUYANG,Ming ZHAO,Daming ZHUANG,Rujun SUN,Li GUO,Xiaolong LI,Mingjie CAO. Influence of Annealing Temperature on Electric Properties of CuIn_1-_xGa_xSe₂ Thin Films. Chinese Journal of Materials Research, 2014, 28(10): 745-750.

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Abstract

The as-deposited CuIn_1-_xGa_xSe₂ (CIGS) thin films were fabricated by magnetron sputtering from a quaternary CIGS target, and then the as-deposited films were annealed in a temperature range from 240℃ to 550℃. The effect of the annealing temperature on the electric properties (carrier concentration and carrier mobility) of the films was investigated in particular. The results show that when the annealing temperature was lower than 270℃, the highly conducive CuSe phase existed in the films leading to a high carrier concentration (10¹⁷-10¹⁹ cm^-3) and a low carrier mobility (~0.1 cm²V^-1s^-1). These films are not suited for CIGS absorber usage. When the annealing temperature was higher than 410℃, the carrier mobility of the films was high about 10 cm²V^-1s^-1 and the carrier concentration was in a range of 10¹⁴-10¹⁷ cm^-3 due to the disappearance of the CuSe phase. When the annealing temperature was higher than 410℃, with the increase of the annealing temperature the grains grew larger and the crystallinity of the films was enhanced, which could reduce the defects in the films and result in the decrease of the carrier concentration. From the aspect of the carrier concentration and the carrier mobility, the appropriate annealing temperature for fabricating the absorbers of the CIGS solar cells is from 450℃ to 550℃.

Key words: inorganic non-metallic materials solar cells CIGS sputtering electric property

Received: 08 May 2014

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	Liangqi OUYANG
	Ming ZHAO
	Daming ZHUANG
	Rujun SUN
	Li GUO
	Xiaolong LI
	Mingjie CAO

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https://www.cjmr.org/EN/10.11901/1005.3093.2014.233 OR https://www.cjmr.org/EN/Y2014/V28/I10/745

Table 1 Sputtering parameters used for the deposition of CIGS

Fig.1 Effects of the annealing temperature on (a) the carrier concentration and (b) carrier mobility of the CIGS films

Fig.2 XRD patterns of CIGS films which were prepared at different annealing temperatures

Fig.3 Effects of the annealing temperature on the I₁ FWHM and I₂/I₁ of the CIGS films

Fig.4 Raman spectra of CIGS films which were prepared at different annealing temperatures

Fig.5 Surface micrograph of (a) the as-deposited CIGS film and CIGS films which were annealed at (b) 240℃, (c) 270℃, (d) 340℃, (e) 410℃, (f) 450℃, (g) 510℃ and (h) 550℃

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