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INFRARED FILTER FABRICATION BY ION BEAM ASSISTED DEPOSITION OF Si_3N_4 / Si FILMS |
JIANG Bingyao ;ZHANG Fumin; SUN Yilin; CHEN Youshan; LIU Xianghuai(Ion Beam Laboralory; Shanghai Institute of Metallurgy; CAS) |
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Cite this article:
JIANG Bingyao ;ZHANG Fumin; SUN Yilin; CHEN Youshan; LIU Xianghuai(Ion Beam Laboralory; Shanghai Institute of Metallurgy; CAS). INFRARED FILTER FABRICATION BY ION BEAM ASSISTED DEPOSITION OF Si_3N_4 / Si FILMS. Chin J Mater Res, 1997, 11(5): 511-514.
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Abstract Infrared filter was fabricated by ion beam assisted deposition of Si3N4/ Si films on the Si substrate. The experiments found that the N2+N+ ion assisted bom-bardment is the key of synthesis Si3N4 films. Strong peaks were found in the infrared reflection s
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Received: 25 October 1997
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1. J.F.Ziegler, J.P.Biersack, U.Littmerk. The Stopping and Raners of Ions in Solids Vol.l of Seriest Stopping andRanges of Ions in Mater(New York, Pergamon Press, 1985) 2. H.J.Erler, G.Reisse, C.Weissmantel, Thin Solid Films. 65, 233(1980) 3. D.K.Brice, Nucl.Instr. and Meth. B17, 289(1986) 4. G.Q.Yang, B.Y.Jiang, Wei Zhou, X.H.Liu, S.C.Zou, Nucl. Instr. and Meth. B37 / 38, 424(1989) |
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