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Chin J Mater Res  1997, Vol. 11 Issue (5): 511-514    DOI:
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INFRARED FILTER FABRICATION BY ION BEAM ASSISTED DEPOSITION OF Si_3N_4 / Si FILMS
JIANG Bingyao ;ZHANG Fumin; SUN Yilin; CHEN Youshan; LIU Xianghuai(Ion Beam Laboralory; Shanghai Institute of Metallurgy; CAS)
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JIANG Bingyao ;ZHANG Fumin; SUN Yilin; CHEN Youshan; LIU Xianghuai(Ion Beam Laboralory; Shanghai Institute of Metallurgy; CAS). INFRARED FILTER FABRICATION BY ION BEAM ASSISTED DEPOSITION OF Si_3N_4 / Si FILMS. Chin J Mater Res, 1997, 11(5): 511-514.

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Abstract  Infrared filter was fabricated by ion beam assisted deposition of Si3N4/ Si films on the Si substrate. The experiments found that the N2+N+ ion assisted bom-bardment is the key of synthesis Si3N4 films. Strong peaks were found in the infrared reflection s
Key words:  infraed filter ion beam assisted deposition Correspondent JIANG Bingyao      Ion Beam Laboratory      Shanghai Institute of Matellurgy      CAS      Shanghai 200050     
Received:  25 October 1997     
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