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Chin J Mater Res  1998, Vol. 12 Issue (6): 610-614    DOI:
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EFFECT OF ANNEALLING ON STRUCTURE AND ELECTRONIC COMPOSITION OF OXYGEN SENSITIVE CeO_(2-x) FILMS
DU Xinhua; LIU Zhedriang;XIE Kan;WANG Yanbin;CHU Wuyang(University of Science and Technology; Beijing 100083)( Institute of Physics; The Chinese Academy of Sciences; Beijing 100080)
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DU Xinhua; LIU Zhedriang;XIE Kan;WANG Yanbin;CHU Wuyang(University of Science and Technology; Beijing 100083)( Institute of Physics; The Chinese Academy of Sciences; Beijing 100080). EFFECT OF ANNEALLING ON STRUCTURE AND ELECTRONIC COMPOSITION OF OXYGEN SENSITIVE CeO_(2-x) FILMS. Chin J Mater Res, 1998, 12(6): 610-614.

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Abstract  The CeO2-x films are deposited from a sintered CeO2-x ceramic target by reactive high frequency sputtering magnetron system. Influence of annealling process on the composition and Structure of CeO2-x films were determined by XRD, AFM and XPS. The results
Key words:  ceria      thin film      structure      annealling     
Received:  25 December 1998     
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https://www.cjmr.org/EN/     OR     https://www.cjmr.org/EN/Y1998/V12/I6/610

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