Magnetization Reversal Field and Magneto-Resistor of Spin Valve

doi:10.11901/1005.3093.2019.330

Chinese Journal of Materials Research

2020, Vol. 34

Issue (4): 272-276 DOI: 10.11901/1005.3093.2019.330

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Magnetization Reversal Field and Magneto-Resistor of Spin Valve

TAN Xi, SONG Yuzhe, SHI Xin, QIANG Jin, WEI Tingxuan, LU Qihai(

)

Key Laboratory of Sensor and Sensing Technology of Gansu Province, Institute of Sensor Technology, Gansu Academy of Sciences, Lanzhou 730000, China

Cite this article:

TAN Xi, SONG Yuzhe, SHI Xin, QIANG Jin, WEI Tingxuan, LU Qihai. Magnetization Reversal Field and Magneto-Resistor of Spin Valve. Chinese Journal of Materials Research, 2020, 34(4): 272-276.

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Abstract

Two kinds of spin valve composed of multilayered films of Ta/CoFe/Fe/Au/Fe/IrMn/Ta and Ta/CoFe¹/Au/CoFe²/IrMn/Ta were deposited respectively on oxidized silicon wafer by high vacuum magnetron sputtering. Their magneto-resistor characteristics and magnetization reversal fields were tailored by selectively adjusting the processing parameters for each of the function layers. The microstructure and thickness of the multilayered films were characterized by means of TEM. The hysteresis loops and magneto resistance (MR) curves were measured by VSM and four-probe measurement tests. Results show that there exists a relationship of vibration attenuation for the MR values with the thickness of the middle isolation layer Au. Namely, with the increase of the thickness of the Au layer, the vibration attenuation weakened. The coercive force and saturation magnetization of the multilayered films were determined by the thickness of each different function layers, which then alter the MR values directly. There was a best MR value for the multilayered structure of Ta/CoFe¹/Au/CoFe²/IrMn/Ta with the following film thickness for each layer: 6/6/3.8/6/9/6 nm.

Key words: metal matrix composites spin valve magnetron sputtering magneto-resistor

Received: 05 July 2019

ZTFLH:

TM271

Fund: the Fund for Less Developed Regions of National Natural Science Foundation of China(No. 51761001);Youth Science and Technology Innovation Fund Project of Gansu Academy of Sciences(No. 2017QN-02);Natural Science Foundation of Gansu Province(No. 17JR5RA180);Application Technology Res-earch and Development Project of Gansu Academy of Sciences(No. 2018JK-16);Innovative Team Construction Project of Gansu Academy of Science(No. 2020CX005-01);Lanzhou Talent Innovation and Entrepreneurship Project, China(No. 2016-RC-80);the 2018 "Western Young Scholars" Project

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	Xi TAN
	Yuzhe SONG
	Xin SHI
	Jin QIANG
	Tingxuan WEI
	Qihai LU

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https://www.cjmr.org/EN/10.11901/1005.3093.2019.330 OR https://www.cjmr.org/EN/Y2020/V34/I4/272

Table 1 Technologic parameters of the typical sample

Fig.1 TEM cross section of sample I

Fig.2 MR% under different IrMn layer thickness for Sample II

Fig.3 Hysteresis loop under different IrMn layer thickness (a), hysteresis loop of irmn layer 12 nm (b), magnetic resistance characteristic curve under different irmn layer thickness (c) and magnetic resistance characteristic curve of IrMn layer 12 nm (d) of sample III

Fig.4 Hysteresis loop under different CoFe¹, CoFe² layer thickness (a) and magnetic resistance characteristic curve under different CoFe¹, CoFe² layer thickness (b) of sample IV

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