Influence of Substrate Bias on Microstructure, Optical- and Electrical- Properties of Amorphous- Carbon Films Prepared by High Power Pulse Magnetron Sputtering

doi:10.11901/1005.3093.2017.547

Chinese Journal of Materials Research

2018, Vol. 32

Issue (4): 283-289 DOI: 10.11901/1005.3093.2017.547

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Influence of Substrate Bias on Microstructure, Optical- and Electrical- Properties of Amorphous- Carbon Films Prepared by High Power Pulse Magnetron Sputtering

Li WANG^1,², Peng GUO², Xiao ZUO², Dong ZHANG², Meidong HUANG¹(

), Peiling KE², Aiying WANG²(

)

1 Tianjin Normal University College of Physics and Materials Science, Tianjin 300387, China
2 Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials of Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China

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Li WANG, Peng GUO, Xiao ZUO, Dong ZHANG, Meidong HUANG, Peiling KE, Aiying WANG. Influence of Substrate Bias on Microstructure, Optical- and Electrical- Properties of Amorphous- Carbon Films Prepared by High Power Pulse Magnetron Sputtering. Chinese Journal of Materials Research, 2018, 32(4): 283-289.

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Abstract

The effect of substrate bias voltages on the microstructure, optical- and electrical- properties of a-C films prepared by HiPIMS were investigated on silicon wafers and quartz glass respectively. Results show that different substrate biases lead to the change of microstructure of the a-C films. The sp² content of a-C film prepared at bias of 0 ~ -300 V is (52.5±1.5)%. When the voltage was -50 V, the size of sp² cluster reached the maximum (1.93 nm), yet the optical band gap (0.15 eV) and resistivity (0.32 Ω·cm) were minimum. Then the size of sp² cluster decreased first and then increased with the increase of bias voltage, while the optical band gap and resistance of the films presented opposite tendency according to the cluster model. The size of sp² clusters in a-C films by HiPIMS played the key role in the optical and electrical properties. The larger the size of the film sp² cluster was, the smaller optical band gap and resistivity were.

Key words: surface and interface in the materials amorphous carbon optical and electrical properties HiPIMS microstructure

Received: 14 September 2017

Fund: Supported by National Key R & D Program of China (No. 2017YFB0702303), National Natural Science Foundation of China (Nos. 51522106 & 51602319), Zhejiang Postdoctoral Sustentation Foundation

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	Li WANG
	Peng GUO
	Xiao ZUO
	Dong ZHANG
	Meidong HUANG
	Peiling KE
	Aiying WANG

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https://www.cjmr.org/EN/10.11901/1005.3093.2017.547 OR https://www.cjmr.org/EN/Y2018/V32/I4/283

Fig.1 Schematic diagram of hybrid HIPIMS system

Fig.2 Deposition rate (a) of a-C films with various bias voltage and Surface morphology (b) of the a-C films deposited at -50 V

Fig.3 C 1s XPS spectra (The inset figure is the C 1s spectra of the sample deposited at -200 V) (a) and the change of sp² content of a-C films with the variation of bias (b)

Fig.4 Raman spectra (a), fitting results (b) of the film deposited at -50 V, The corresponding I_D/I_G ratio, G peak position and GFWHM of a-C films deposited at different bias (c) and cluster size of the deposited a-C films with the variation of bias (d) (The inset figure is the schematic of sp² cluster)

Fig.5 Transmittances of the deposited a-C films with the variation of bias in different wavelength range (a) 2.5~25 μm, (b) 0.2~1.5 μm

Fig.6 Typical Tauc plot to determine optical band gap of a-C thin film deposited at 0 V (a) and the change of E_opt of the deposited a-C films with the variation of bias (b)

Fig.7 The change of resistivity of the deposited a-C films with the variation of bias (a) andI-V characteristic plot of the a-C film deposited at 0 V (b)

Fig.8 Relationship between I_D/I_G and 1/(E_opt)²

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