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| Effect of Dilute Gas on Microcrystalline Si Films Deposited by ECR-PECVD |
| CHENG Hua1,2 QIAN Yongchan2 XUE Jun2 WU Aimin3 SHI Nanlin1* |
1. Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016
2. Armor Technique Institute of PLA, Changchun 130117
3. Dalian University of Technology, Dalian 116024 |
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Cite this article:
CHENG Hua1,2 QIAN Yongchan, XUE Jun, WU Aimin, SHI Nanlin1*. Effect of Dilute Gas on Microcrystalline Si Films Deposited by ECR-PECVD. Chinese Journal of Materials Research, 2013, 27(3): 307-311.
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Abstract The microcrystalline silicon films were deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD) using SiH4/Ar and SiH4/H2 gaseous mixture. The effects of dilute gas on deposition rate, crystallinity, grain size and the configuration of H existing in microcrystalline silicon films were investigated. The results show that the deposition rate of the film using Ar as discharge gas is 1.5-2 times higher than that using H2, but the film crystallinity is lower. At the same time, the concentration of hydrogen in the films deposited using SiH4/Ar is less than that of using SiH4/H2, but the preferred orientations and the grain sizes of the films are analogous.
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Received: 11 March 2013
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| About author: *To whom correspondence should be addressed, Tel: (024)23971772, E-mail: nlshi@imr.ac.cn |
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