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| The Preparation and Application of Plasma Polymerized Paraxylene |
| ZHANG Zhihong, DOU Jun, Niu Xiaoxia, YAN Fufeng, PENG Donglai, ZHENG Xianjun |
| Henan Provincial Key Laboratory of Surface & Interface Science, Zhengzhou University of Light Industry, Zhengzhou 450002 |
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Cite this article:
ZHANG Zhihong DOU Jun Niu Xiaoxia YAN Fufeng PENG Donglai ZHENG Xianjun. The Preparation and Application of Plasma Polymerized Paraxylene. Chin J Mater Res, 2010, 24(4): 353-357.
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Abstract Plasma graft polymerization of para–xylene (ppPX) on argon plasma–pretreated porous SiLK films coated Si(100) wafers (Si–SiLK) and retardation of copper diffusion on ppPX are investigated in the present work. The topography of the ppPX grafted Si–SiLK (Si–SiLK–g–ppPX) surfaces was analyzed by atomic force microscopy. X–ray photoelectron spectroscopy and fourier transform infrared spectroscopy results show that the benzene rings of ppPX can be retained to a large extent under a certain grow discharge conditions. Field emission scanning electron microscopy reveals the extent of copper diffusion into the pristine and graft–modified Si–SiLK substrates after thermal annealing. Since para–xylene monomers were introduced with argon (Ar) and nitrogen (N2), the different chemical structures of two kinds of ppPX are achieved and it is found that nitrogen could improve the adhesion between copper and the polymer film. Therefore, ppPX surface prepared on Si–SiLK wafers surface can serve a promising adhesion promotion layer and a diffusion barrier for copper.
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Received: 29 April 2010
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| Fund: Supported by National Nature Science Foundation of China No.20704039 and Program for Science & Technology Innovation Talents in Universities of Henan Province No.2010HASTIT023. |
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