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| Electrochemical Properties of Nitrogen-doped DLC Films Deposited by PECVD Technique |
Kai ZHOU1,2,Peiling KE2,Aiying WANG2,**( ),Yousheng ZOU1 |
1. School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094
2. Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technologies and Engineering, Chinese Academy of Sciences, Ningbo, 315201 |
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Cite this article:
Kai ZHOU,Peiling KE,Aiying WANG,Yousheng ZOU. Electrochemical Properties of Nitrogen-doped DLC Films Deposited by PECVD Technique. Chinese Journal of Materials Research, 2014, 28(3): 161-165.
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Abstract Diamond-like carbon (DLC) and Nitrogen-doped diamond-like carbon (N-DLC) films were synthesized by glow discharge plasma enhanced chemical vapor deposition (PECVD) using a hybrid ion beam system. The microstructure and surface topography of films were characterized by Raman spectroscopy, X-ray photoemission spectroscopy and scanning probe microscopy. The electrochemical performance of the films was examined by an electrochemical workstation. Results indicate that the surface of all the deposited films is very smooth with low roughness. Nitrogen doping enhances the clustering of sp2 sites and results in the formation of C-N bond, meanwhile, increases the amount of C-O bond and the surface active sites of films. N-DLC film electrode shows a wide potential window range over 4.5 V, lower background current (0.3±0.2 μA/cm2) in H2SO4 solution. N-DLC film electrode with good repeatability and stability displays significantly current response and nearly reversible electrode reaction in K3Fe (CN) 6 solution. Furthermore, the electrode reaction is controlled by diffusion process.
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Received: 23 October 2013
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| Fund: *Supported by National Basic Research Program of China No. 2012CB933003, National Natural Science Foundation of China No.51371187, Ningbo Science and Technology Innovation Team No. 2011B81001, and Fundamental Research Funds for the Central Universities No.30920130111019. |
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