|
|
|
| 喷涂工艺参数对HA涂层结构和结晶度的影响 |
| 贺定勇;赵秋颖;赵力东;孙旭峰 |
| 北京工业大学材料科学与工程学院 北京100022(贺定勇;赵秋颖;孙旭峰);德国亚琛工业大学表面工程研究所 亚琛D-52070(赵力东) |
|
引用本文:
贺定勇;赵秋颖;赵力东;孙旭峰. 喷涂工艺参数对HA涂层结构和结晶度的影响[J]. 材料研究学报, 2007, 21(6): 657-663.
1 Nakamura S,The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes, Science,281,956(1998)
2 Lester S S,Ponce F A,Craford M G,High dislocation densities in high efficiency GaN-based LED,Appl.Phys. Lett.,66,1249(1995)
3 Pauc N,Philips M R,Aimez V,Carrier recombina- tion near threading dislocations in GaN epilayers by low voltage cathodoluminescence,Appl.Phys.Lett.,89, 161905(2006)
4 Miraglia P Q,Preble E A,Roskowski A M,Einfeldt S,and Davis R F,Helical-type surface defects in GaN thin films epitaxially grown on GaN templates at reduced tempera- tures,J.Cryst.Growth,253,16(2003)
5 Heying B,Tarsa E J,Eisass C R,Fini P,DenBaars S P. and Speck J S,Dislocation mediated surface morphology of GaN,J.Appl.Phys.,85,6470(1999)
6 Hitoshi S,Sadahiro K,Takeyoshi M,Yoshihiro S, Masayuki I,and Seikoh Y,Investigation of surface pits originating in dislocations in AlGaN/GaN epitaxial layer grown on Si substrate with buffer layer,Jap.J.Appl. Phys.Part I,45,2531(2006)
7 Chen H,Feenstra R M,Norhrup J E,Zywietz T,and Neugebauer,Spontaneous formation of indium-rich nanos- tructures on InGaN(0001) surfaces,J.Phys.Rev.Lett., 85,1902(2000)
8 Du D,Srolovitz D J,Faceted dislocation surface pits,Acta Materialia,52,3365(2004)
9 Michael A R,Hadis M,Luminescence properties of defects in GaN,J.Appl.Phys.,97,061301(2005)
10 Lei H,Leipner H S,Schreiber J,Weyher J L,Wosinski T, and Grzegory I.,Raman and cathodoluminescence study of dislocations in GaN,J.Appl.Phys.,92,6666(2002)
11 Kim C,Kim S,Choi Y,and Leem S J,Correlation between the type of threading dislocations and photoluminescence characteristics at different doping concentrations of Si in GaN films,J.Appl.Phys.,92,6343(2002)
12 Liu J P,Wang Y T,Yang H,Jiang D S,Jahn U,Ploog K H.,Investigations on V-defects in quaternary AlInGaN epilayers,Appl.Phys.Lett.,84,5449(2004)
13 Pauc N,Phillips M R,Aimez V,and Drouin D.,Carrier re- combination near threading dislocations in GaN epilayers by low voltage cathodoluminescence,Appl.Phys.Lett., 89,161905(2006)
14 Li S Y,Zhu J.,Al diffusion in GaN buffer layer during the growth of GaN film,J.Cryst.Growth,203,473(1999)
15 Fung S,Xu X L,Zhao Y W,Sun W H,Chen X D,Sun N F,Sun T N and Jiang C X.,Gallium/aluminum interdif- fusion between n-GaN and sapphire,J.Appl.Phys.,84, 2355(1998)
16 Koleske D D,Wickenden A E,Henry R L,DeSisto W J,and Gorman R J.,Growth model for GaN with com- parison to structural,optical,and electrical properties,J. Appl.Phys.,84,1998(1998)
17 Kato Y,Kitamura S,Hiramatsu K,and Sawaki N., Selective growth of wurtzite GaN and Al_xGa_(1-x)N on GaN/sapphire substrates by metalorganic vapor phase epitaxy,J.Cryst.Growth,144,133(19 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
| |
Shared |
|
|
|
|
| |
Discussed |
|
|
|
|
