制备工艺参数对磁控溅射<strong>Ni5Pt</strong>薄膜的影响

doi:10.11901/1005.3093.2025.324

材料研究学报

2026, Vol. 40

Issue (8): 613-623 DOI: 10.11901/1005.3093.2025.324

研究论文

本期目录 | 过刊浏览

制备工艺参数对磁控溅射Ni5Pt薄膜的影响

张铭原¹^,², 闻明³, 李思勰³, 张滨⁴, 张广平²(

)

^1.中国科学技术大学材料科学与工程学院沈阳 110016
^2.中国科学院金属研究所高性能均质合金国家工程研究中心沈阳 110016
^3.昆明贵金属研究所贵金属功能材料全国重点实验室昆明 650106
^4.东北大学材料科学与工程学院材料各向异性与织构教育部重点实验室沈阳 110819

Effect of Processing Parameters on Magnetron Sputtering Preparation of High-quality Ni5Pt Films for Schottky Diodes

ZHANG Mingyuan¹^,², WEN Ming³, LI Sixie³, ZHANG Bin⁴, ZHANG Guangping²(

)

^1.School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
^2.National Engineering Research Center for High Performance Homogenized Alloys, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
^3.State Key Laboratory of Precious Metal Functional Materials, Kunming Institute of Precious Metals, Kunming 650106, China
^4.Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Materials Science and Engineering, Northeastern University, Shenyang 110819, China

引用本文:

张铭原, 闻明, 李思勰, 张滨, 张广平. 制备工艺参数对磁控溅射Ni5Pt薄膜的影响[J]. 材料研究学报, 2026, 40(8): 613-623.
Mingyuan ZHANG, Ming WEN, Sixie LI, Bin ZHANG, Guangping ZHANG. Effect of Processing Parameters on Magnetron Sputtering Preparation of High-quality Ni5Pt Films for Schottky Diodes[J]. Chinese Journal of Materials Research, 2026, 40(8): 613-623.

全文: PDF(10902 KB) HTML

摘要:

分别在面外取向为(001)和(111)的单晶硅基底磁控溅射Ni5Pt合金薄膜，根据动力学标度理论量化研究了基底温度、溅射时间和基底取向对薄膜表面的粗糙度和微观结构的影响，并揭示了薄膜开裂失效的微观机理。结果表明，磁控溅射Ni5Pt合金薄膜的生长模式为层-岛状(SK)生长，其表面粗糙度随沉积时间的延长和基底温度的降低而提高，且与基面的晶体取向有关。给出了制备性能优异Ni5Pt薄膜的工艺参数。基于残余应力超过断裂强度的薄膜的断裂判据，得到了沉积态Ni5Pt薄膜开裂的基底“工程近似”临界厚度和对应的临界沉积时间。

关键词 ：金属材料, Ni5Pt薄膜, 表面粗糙度, 残余应力, 磁控溅射, 肖特基二极管

Abstract：

With the rapid development of ultra-high-speed and low-power Schottky barrier diode (SBD), the height and stability of the Schottky barrier have become a critical factor driving the continued evolution of the electronic and information technology industry. However, challenges such as uncontrollable surface quality, crack formation, and a lack of theoretical guidance for process optimization limit practical applications. Herein, Ni5Pt alloy films were prepared on substrates of single crystal Si with orientations of (100) and (111) respectively via magnetron sputtering technique by varying the substrate temperature and deposition time. The influence of sputtering parameters on the microstructure and surface morphology of the acquired films was characterized, while the mechanism related to the cracking failure of the films was postulated. Results reveal that the growth mechanism of Ni5Pt conforms to Stranski-Krastanov (SK) model. Surface roughness of films increases with the increasing deposition time and the decreasing substrate temperature, besides, which also depends on the crystallographic orientation of the basal plane of substrates. A cracking criterion based on residual stress was proposed, thereafter, the optimal sputtering parameters were established. The findings provide not only an important theoretical guidance for obtaining a Schottky barrier layer with good interface continuity and high barrier stability, but also a meaningful reference for the R & D of high-performance Schottky barrier diode devices in the future.

Key words： metallic materials Ni5Pt film surface roughness residual stress magnetron sputtering Schottky barrier diode

收稿日期: 2025-11-03

ZTFLH:

O484

基金资助:国家自然科学基金(U25A20218);云南省科技计划(202305AF150171)

通讯作者: 张广平，研究员，gpzhang@imr.ac.cn，研究方向为薄膜与微小尺度材料力学行为

Corresponding author: ZHANG Guangping, Tel: (024)23971938, E-mail: gpzhang@imr.ac.cn

作者简介: 张铭原，男，2000年生，硕士生

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表1 Ni5Pt样品的编号和名称

图1 在三种温度的Si(100)基底沉积不同时间的Ni5Pt合金薄膜的表面SEM照片

图2 在三种温度的基底沉积不同时间的Ni5Pt合金薄膜的表面裂纹密度

图3 在三种温度的Si(100)和Si(111)基底沉积不同时间的Ni5Pt薄膜的XRD谱

图4 Ni5Pt薄膜表面的TEM照片和晶粒尺寸分布直方图

图5 在三种温度的Si(100)基底上沉积不同时间的Ni5Pt合金薄膜的表面AFM照片

图6 在三种温度的基底沉积不同时间的Ni5Pt薄膜的厚度

图7 在三种温度的基底沉积不同时间的Ni5Pt薄膜的表面粗糙度与膜厚度的关系，以及表面粗糙度指数α随基底温度的变化

图8 制备工艺参数不同的Ni5Pt薄膜的残余应力和Griffith计算断裂强度与薄膜厚度的关系，以及残余应力与计算断裂强度交汇区域 (图中虚线为计算断裂应力，实线为薄膜残余应力且由于不同基底温度的薄膜溅射速率不同，因而计算得到的断裂强度略有不同，这里仅给出溅射速率为8.50 nm/min所对应的断裂强度用以示意)

表2 Ni5Pt薄膜发生断裂的临界厚度和临界沉积时间

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