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材料研究学报  2026, Vol. 40 Issue (8): 624-630    DOI: 10.11901/1005.3093.2025.348
  研究论文 本期目录 | 过刊浏览 |
SiCf/SiC复合材料用B-N-Si新型界面相的高通量制备与性能研究
雷一明1, 石金瑜1,2, 吕熙睿1, 张洁1(), 王京阳1
1.中国科学院金属研究所 沈阳材料科学国家研究中心 沈阳 110016
2.中国科学技术大学材料科学与工程学院 沈阳 110016
High-throughput Screening of a Novel B-N-Si Interphase for Continuous SiC Fiber Reinforced SiC Ceramic Matrix Composites
LEI Yiming1, SHI Jinyu1,2, LV Xirui1, ZHANG Jie1(), WANG Jingyang1
1.Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
2.School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
引用本文:

雷一明, 石金瑜, 吕熙睿, 张洁, 王京阳. SiCf/SiC复合材料用B-N-Si新型界面相的高通量制备与性能研究[J]. 材料研究学报, 2026, 40(8): 624-630.
Yiming LEI, Jinyu SHI, Xirui LV, Jie ZHANG, Jingyang WANG. High-throughput Screening of a Novel B-N-Si Interphase for Continuous SiC Fiber Reinforced SiC Ceramic Matrix Composites[J]. Chinese Journal of Materials Research, 2026, 40(8): 624-630.

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摘要: 

连续碳化硅纤维增强碳化硅陶瓷基复合材料(SiCf/SiC)中,界面相通常对载荷传递、界面解离及纤维保护起着关键作用,进而决定了复合材料的力学性能、热力学稳定性及耐腐蚀性。针对热解碳和六方氮化硼等传统界面相高温水蒸气氧化性能较差的瓶颈,本研究聚焦B-N-Si新型界面相。采用高通量组合材料芯片制备及表征技术,系统研究了Si含量对其结构、力学性能以及抗高温水蒸气氧化性能的影响。结果表明,在室温沉积的B-N-Si薄膜均为非晶结构,且掺杂的硅原子倾向于取代硼原子形成Si-N键。Si含量(原子分数)为7.57%~19.66%的薄膜均满足裂纹偏转的力学判据,具有理想的增韧潜力;Si含量高于11.76%的薄膜在900 ℃、90%H2O-10%O2条件下因氧化生成B2O3‧SiO2玻璃相而膨胀,具有优异的自愈合能力和抗氧化性能。

关键词 材料表面与界面组合材料芯片界面相裂纹偏转水蒸气氧化    
Abstract

Continuous SiC fiber reinforced SiC ceramic matrix composites are promising high-temperature structural materials for aerospace applications, whose performance is strongly influenced by the interphase between the fiber and the matrix. Although traditional interphases such as pyrolytic carbon and hexagonal boron nitride possess a layered structure, the resistance against high-temperature steam oxidation is relatively poor. This work focused on the B-N-Si ternary system as a novel interphase candidate. The effect of Si content on the structure, mechanical properties, and high-temperature water vapor oxidation behavior of B-N-Si interphase material were systematically investigated by means of high-throughput fabrication and characterization technique. The results showed that all B-N-Si coatings deposited at room temperature exhibited an amorphous structure, with silicon atoms preferentially replacing boron atoms and forming Si-N bonds. When silicon content was in the range of 7.57%-19.66% (atomic fraction), all coatings satisfied the mechanical requirements for crack deflection. Moreover, when the silicon content exceeds 11.76%, the coatings could swell up after oxidation at 900 oC in a 90%H2O-10%O2 atmosphere due to the formation of B2O3·SiO2 glass phase, exhibiting remarkable self-healing capability and oxidation resistance.

Key wordssurface and interface in the materials    combinatorial material chip    interphase    crack deflection    steam oxidation resistance
收稿日期: 2025-11-26     
ZTFLH:  TG174.2  
基金资助:国家重点研发计划(2022YFB3707700)
通讯作者: 张 洁,研究员,jiezhang@imr.ac.cn,研究方向为极端环境陶瓷涂层应用基础
Corresponding author: ZHANG Jie, Tel: (024)23970490, E-mail: jiezhang@imr.ac.cn
作者简介: 雷一明,男,1992年生,博士
图1  制备在单晶氧化铝上的组合材料芯片光学照片和Si含量分布图
图2  不同Si含量样品的XPS图谱
图3  B-N-Si薄膜的硬度和模量与Si含量的关系
图4  裂纹偏转潜能(σic/σ2c)与两侧材料模量比值E2/E1的关系[22]
图5  B-N-Si薄膜在900 ℃、90%H2O-10%O2条件下氧化前后的厚度变化
图6  Si含量为7.57%、8.22%、11.76%和17.44%的B-N-Si薄膜在900 ℃、90%H2O-10%O2条件下氧化后的表面形貌
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