Thermoelectric Properties of Mg-rich Mg3Bi2 Films Prepared by Magnetron Sputtering

doi:10.11901/1005.3093.2021.009

Chinese Journal of Materials Research

2021, Vol. 35

Issue (11): 835-842 DOI: 10.11901/1005.3093.2021.009

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Thermoelectric Properties of Mg-rich Mg₃Bi₂ Films Prepared by Magnetron Sputtering

SONG Guihong¹(

), LI Xiuyu¹, LI Guipeng¹, DU Hao², HU Fang¹

^1.School of Materials Science and Technology, Shenyang University of Technology, Shenyang 110870, China
^2.Institute of Corrosion Science and Technology of Guangzhou, Guangzhou 510530, China

Cite this article:

SONG Guihong, LI Xiuyu, LI Guipeng, DU Hao, HU Fang. Thermoelectric Properties of Mg-rich Mg₃Bi₂ Films Prepared by Magnetron Sputtering. Chinese Journal of Materials Research, 2021, 35(11): 835-842.

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Abstract

Mg-rich Mg₃Bi₂ thin films were prepared by magnetron sputtering with dual targets of Mg-Bi intermetallic compound and metal Mg. The phase composition, surface and cross-sectional morphology as well as thermoelectric properties of the thin films were characterized. The results show that the Mg-rich thin film is composed of phases Mg₃Bi₂ phase and Mg. There exists Mg vacancies within the phase Mg₃Bi₂, therefore, which presents characteristics of p-type conductivity with a positive Seebeck coefficient. With the increase of temperature, the resistance of Mg-rich Mg₃Bi₂films increases slightly at first and then decreases significantly. With the increase of Mg content, the resistivity of Mg-rich Mg₃Bi₂ films gradually increases, but when the Mg content reaches a certain value, the resistivity drops sharply. When the Mg content was low, the Seebeck coefficient first decreased slightly and then increased rapidly with the increase of temperature, and then decreased rapidly after reaching the maximum value. When the Mg content was high, the Seebeck coefficient increased slightly at first and then decreased slowly with the increase of temperature. Except for the samples with low Mg content, the Seebeck coefficient of the films increases with the increase of Mg content at the same temperature, but the Seebeck coefficient decreases rapidly when the Mg content is too high, reaching more or less a level of the same order of magnitude of the Seebeck coefficient of common metal materials. Nevertheless, the power factor of this Mg-rich Mg₃Bi₂film is controlled by the Seebeck coefficient and the resistivity.

Key words: inorganic nonmetallic materials thermoelectric materials Mg₃Bi₂ films Seebeck coefficient Resistivity magnetron sputtering

Received: 18 January 2021

ZTFLH:

O614.22

Fund: National Natural Science Foundation of China(51772193)

About author: SONG Guihong, Tel: 13898829530, E-mail :songgh@sut.edu.cn

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https://www.cjmr.org/EN/10.11901/1005.3093.2021.009 OR https://www.cjmr.org/EN/Y2021/V35/I11/835

Fig.1 XRD patterns of rich Mg films

Fig.2 Binary phase diagram of Mg and Bi

Table 1 Chemical composition of deposited films

Fig.3 Surface morphology of rich Mg films. (a) 60 s; (b) 90 s; (c) 120 s; (d) 150 s

Fig.4 Cross-section morphology of rich Mg films. (a) 60 s; (b) 90 s; (c) 120 s; (d) 150 s

Fig.5 Surface morphology (a, d) and elemental mapping (b, c, e, f) of S1, S4 samples

Fig.6 Temperature dependence of the resistivity for deposited films (a); the relations of conductivity logarithm versus measured temperature reciprocal (b) of rich Mg film

Fig.7 Temperature dependence of Seebeck coefficient of rich Mg films

Fig.8 Temperature dependence of power factor of rich Mg films

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