Topological Quantum Materials and Quantum Anomalous Hall Effect

doi:10.11901/1005.3093.2014.801

Chinese Journal of Materials Research

2015, Vol. 29

Issue (3): 161-177 DOI: 10.11901/1005.3093.2014.801

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Topological Quantum Materials and Quantum Anomalous Hall Effect

Ke HE(

),Qikun XUE(

)

State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China

Cite this article:

Ke HE,Qikun XUE. Topological Quantum Materials and Quantum Anomalous Hall Effect. Chinese Journal of Materials Research, 2015, 29(3): 161-177.

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Abstract

We briefly review topological quantum materials, a new system of materials developed since 2005, including topological insulators, topological crystalline insulators, topological superconductors, and topological semimetals. The strong spin-orbit coupling in these materials lead to rich quantum phenomena such as quantum anomalous Hall effect, which can significantly promote the developments of new technologies such as low-energy-consuming electronics, topological quantum computation, and green energy.

Key words: review topological insulator quantum Hall effect quantum anomalous Hall effect

Received: 12 August 2014

Fund: *Supported by National Natural Science Foundation of China No. 11174343.

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https://www.cjmr.org/EN/10.11901/1005.3093.2014.801 OR https://www.cjmr.org/EN/Y2015/V29/I3/161

Fig.1 Landau levels (a) and integer quantum Hall effect (b) formed in two-dimensional electron gas in strong magnetic field. The blue and green lines in figure(b) indicate Hall and longitudinal resistances, respectively. (Figure from wikipedia: http://en.wikipedia.org/wiki/Quantum_Hall_effect)

Fig.2 Schematics of chiral edge states of quantum Hall effect/quantum anomalous Hall effect (a), helical edge states of quantum spin Hall effect (b), and Dirac surface states of three-dimensional topological insulator. The arrows in (a) and (b) indicate current direction. The line colors indicate spin direction. The arrows in (c) indicate spin direction

Fig.3 Structure of two-dimensional topological insulator (Hg, Cd)Te/HgTe/(Hg, Cd)Te quantum well(a) and the experimentally measured quantum spin Hall effect (b) (Figure from Ref. [18])

Fig.4 Crystal structure (a) and theoretically calculated (b) and experimentally measured (c) surface band structure of three-dimensional topological insulator Bi₂Se₃. (Part of figure from Ref.[32])

Fig.5 Evolution of the surface band structure of MBE-grown Bi₂Se₃ thin films with thickness measured with ARPES. (Figure from Ref. [49])

Fig.6 Schematics of quantum anomalous Hall effect: magnetic field dependence of the Hall resistance (a); chemical potential dependence of the Hall and longitudinal conductances (b)

Fig.7 Hall traces of Cr-doped (Bi_xSb_1-_x)₂Te₃films with different Bi concentrations (a-f) and a schematic (g) and optic microscope photo of the field-effect device of Cr-doped (Bi_xSb_1-_x)₂Te₃film with SrTiO₃ substrate as gate dielectric (Figure from Ref. [75, 79])

Fig.8 Experimental realization of the QAH effect: (a) Magnetic field dependence of r_yx at different V_gs, (b) Dependence of r_yx (0) (blue) and r_xx(0) (red) on V_g (Figure from Ref. [79])

Fig.9 The QAH effect under strong magnetic field measured at 30 mK: Magnetic field dependence of r_yx (a) and r_xx (b) (Figure from Ref. [79])

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