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Chinese Journal of Materials Research  2014, Vol. 28 Issue (7): 549-554    DOI: 10.11901/1005.3093.2014.142
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Effect of Annealing Conditions on Microstructure of High Silicon Steel Prepared by Electrodeposition
Hui LI,Jinglong LIANG,Yungang LI(),Fenping ZHANG
Key Laboratory of Ministry of Education for Modern Metallurgy Technology, College of Metallurgy and Energy, Hebei United University, Tangshan 063009
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Hui LI,Jinglong LIANG,Yungang LI,Fenping ZHANG. Effect of Annealing Conditions on Microstructure of High Silicon Steel Prepared by Electrodeposition. Chinese Journal of Materials Research, 2014, 28(7): 549-554.

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Abstract  

The effect of annealing temperature and time on the microstructure, distribution of silicon, texture and magnetism of the high silicon steel prepared by electrodeposition was investigated. The results showed that after annealing at 1000℃ for 210 min, the mean grain size of steel was about 190 μm with a uniform grain size distribution, and the silicon is also uniformly distributed on the entire cross section with an average Si concentration 6.3715% (close to 6.5%); With the increasing annealing time at high temperature, the texture with double crystal planes {100} and {110} preferential oriented microstructure was enhanced, and the iron loss was lowered, implying a relatively good magnetism for the high silicon steel prepared by the proposed process.
Key words:  metallic materials      high silicon steel      microstructure      Goss texture      magnetism     
Received:  26 March 2014     
Fund: *Supported by National Natural Science Foundation of China No.51274082.
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Hui LI
Jinglong LIANG
Yungang LI
Fenping ZHANG

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https://www.cjmr.org/EN/10.11901/1005.3093.2014.142     OR     https://www.cjmr.org/EN/Y2014/V28/I7/549

Element Si Cr Mn P S C O
1.6039 0.104051 0.721005 0.025782 0.002159 0.00231 0.06563
Table1  Main chemical composition of base sample (mass fraction, %)
Sample Temperature/℃ Holding time /min Average grain size/μm Average grain size grade
No.1 900 60 75.380 4.2
No.2 950 60 140.565 2.4
No.3 1000 60 184.838 1.6
No.4 1050 60 256.886 0.5
No.5 1000 90 187.421 1.5
No.6 1000 150 187.665 1.5
No.7 1000 180 188.376 1.5
No.8 1000 210 188.840 1.5
Table2  Sample annealing technological parameter after electrodeposition
Fig.1  OM images of samples annealed at 900℃ for 60 min (a), 950℃ for 60 min (b), 1000℃ for 60 min (c), 1050℃ for 60 min (d), 1000℃ for 90 min (e), 1000℃ for 150 min (f), 1000℃ for 180 min (g) and 1000℃ for 210 min (h)
Fig.2  Distribution of Si content in samples annealed at 900℃ for 60 min (a), 950℃ for 60 min (b), 1000℃ for 60 min (c), 1050℃ for 60 min (d), 1000℃ for 90 min (e), 1000℃ for 150 min (f), 1000℃ for 180 min (g), and 1000℃ for 210 min (h)
Fig.3  φ2=45°sections of ODFs for base sample (density level: 1, 2, 5, 7, 9, 9.2)
Fig.4  φ2=45°sections of ODFs for samples annealed (density level: 1, 2, 4, 6, 8, 8.5) (a) 60 min, 900℃, (b) 60 min, 950℃, (c) 60 min, 1000℃, (d) 60 min, 1050℃, (e) 1000℃, 90 min, (f) 1000℃, 150 min, (g) 1000℃, 180 min, (h) 1000℃, 210 min
Sample Temperature/℃ Time/min Average content of silicon/% Density ρ/kgdm-3 Magnetic strength B50/T Iron loss P1.5/50/Wkg-1
No.1 900 60 2.64 7.65 1.665 4.970
No.2 950 60 2.72 7.65 1.706 4.721
No.3 1000 60 3.20 7.63 1.687 4.57
No.4 1050 60 4.12 7.60 1.666 4.343
No.5 1000 90 4.50 7.55 1.683 3.447
No.6 1000 150 5.64 7.50 1.706 1.874
No.7 1000 180 5.32 7.50 1.708 1.884
No.8 1000 210 6.37 7.48 1.706 1.843
Table3  Electromagnetic properties of samples after annealing under different conditions
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