Modification of M–type Ba–ferrite Through Doping Co–Ti

Chin J Mater Res

2010, Vol. 24

Issue (6): 638-642 DOI:

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Modification of M–type Ba–ferrite Through Doping Co–Ti

NIE Hai^1,2, ZHANG Huaiwu¹, LI Yuanxun¹, LING Weiwei¹

1.State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054
2.Microelectronics Lab., Department of Communication Engineering, Chengdu University of Information Technology, Chengdu 610225

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NIE Hai ZHANG Huaiwu LI Yuanxun LING Weiwei. Modification of M–type Ba–ferrite Through Doping Co–Ti. Chin J Mater Res, 2010, 24(6): 638-642.

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Abstract The EM performance of M–type Ba–ferrite is improved through the doping of Co–Ti, and the ideal doping amount is determined. The initial permeability of the material is increased from 1.5 to 15, Hc achieve minimum and the dielectric constant decrease with raise of the frequency when substitute amount of M–type Ba–ferrite is 1 at M–type Ba–ferrite doping Co–Ti.It can be used to fabricate the high frequency chip inductor. Introduction of Co–Ti is beneficial reducing the sintering temperature for the product . The sintering temperature of the material can be decreased to about 1000^oC.

Key words: non–metallic materials M–type Ba–ferrite sol–gel method doping

Received: 29 April 2010

ZTFLH:

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Supported by China Postdoctora Scientific Foundation No.20090450415 and State Key Laboratory of Electronic Thin Films and Integrated Devices Open Foundation No.KFJJ200913 and Sichuan Science and Technology Support Plan Project No.2009GZ0168 and Chengdu University of Information echnology Scientific Research Project.

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https://www.cjmr.org/EN/ OR https://www.cjmr.org/EN/Y2010/V24/I6/638

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