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MOCVD GROWTH AND TEM CHARACTERIZATIONS OF GaAs/Al_xGa_(1-x)As QUANTUM HETEROSTRUCTURES |
XU Xian'gang HUANG Baibiao LIU Shiwen REN Hongwen YU Shuqin JIANG Minhua (Shandong University) |
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Cite this article:
XU Xian'gang HUANG Baibiao LIU Shiwen REN Hongwen YU Shuqin JIANG Minhua (Shandong University). MOCVD GROWTH AND TEM CHARACTERIZATIONS OF GaAs/Al_xGa_(1-x)As QUANTUM HETEROSTRUCTURES. Chin J Mater Res, 1993, 7(2): 127-131.
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Abstract The MOCVD growth of GaAs/Al_xGa_(1-x)As quantum heterostructures(in-cluding superlattices,quantum wells,double barrier resonant tunneling diods)are reportedin this paper.The interface structures of the epilayers are characterized by cross-sectionaltransmi
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Received: 25 April 1993
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