多周期分层溅射硫化物靶制备铜锌锡硫薄膜太阳电池

doi:10.11901/1005.3093.2018.157

材料研究学报

2018, Vol. 32

Issue (6): 409-414 DOI: 10.11901/1005.3093.2018.157

研究论文

本期目录 | 过刊浏览

多周期分层溅射硫化物靶制备铜锌锡硫薄膜太阳电池

王强, 郝瑞亭(

), 赵其琛, 刘思佳

云南师范大学能源与环境科学学院昆明 650500

Preparation of Cu₂ZnSnS₄ Thin Film Solar Cells by Cyclically and Sequentially Sputtering Three Sulfide-targets

Qiang WANG, Ruiting HAO(

), Qichen ZHAO, Sijia LIU

College of Energy and Environmental Sciences, Yunnan Normal University, Kunming 650500, China

引用本文:

王强, 郝瑞亭, 赵其琛, 刘思佳. 多周期分层溅射硫化物靶制备铜锌锡硫薄膜太阳电池[J]. 材料研究学报, 2018, 32(6): 409-414.
Qiang WANG, Ruiting HAO, Qichen ZHAO, Sijia LIU. Preparation of Cu₂ZnSnS₄ Thin Film Solar Cells by Cyclically and Sequentially Sputtering Three Sulfide-targets[J]. Chinese Journal of Materials Research, 2018, 32(6): 409-414.

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摘要:

按照ZnS/CuS/SnS/CuS的顺序分层溅射硫化锌、硫化铜和硫化亚锡三个二元硫化物靶,制备铜锌锡硫(CZTS)的预制层。在预制层总厚度不变的情况下按照上述顺序将预制层分多个周期溅射,然后在360℃对含硫预制层进行低温退火,再在硫气氛中进行高温(600℃)硫化处理,制备出CZTS薄膜。周期数为3的CZTS薄膜表面平整致密、晶粒大小均匀,禁带宽度为1.50 eV。用这种薄膜制备的CZTS薄膜太阳电池性能最好,其开路电压(V_oc)为623 mV,短路电流密度(J_sc)为11.79 mA/cm²,光电转换效率达到2.93%。

关键词 ：材料合成与加工工艺, 分周期溅射, 铜锌锡硫, 高温硫化

Abstract：

Layered films of Cu₂ZnSnS₄ (CZTS) thin films were prepared by sequentially and cyclically sputtering three targets of ZnS, CuS and SnS, which then were annealing at 360℃ for 30 min, afterwards they were sulfurized in a graphite box with 0.5 g sulfur powder at 600℃ for desired period of time. For three cycles of sputtering (T3), the prepared CZTS thin layered film is dense and compact with smooth surface, uniform crystal-grain size and a band gap of 1.5 eV. The solar cell assembled by the T3 ZTS film has better performance with the following parameters: the open circuit voltage 623 mV and the short-circuit current density 11.79 mA/cm², respectively. Correspondingly, the photoelectric conversion efficiency could reach 2.93%.

Key words： synthesizing and processing technics for materials periodic sputtering CZTS high temperature sulfurization

收稿日期: 2018-02-06

ZTFLH:

TM615

基金资助:国家自然科学基金(61774130,11474248,61176127,61006085),国际科技合作重点项目(2011DFA62380),教育部博士点基金(20105303120002)

作者简介:

作者简介王强,男,1963年生,高级实验师

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https://www.cjmr.org/CN/10.11901/1005.3093.2018.157 或 https://www.cjmr.org/CN/Y2018/V32/I6/409

表1 基于 substrate/ZnS/CuS/SnS/CuS周期顺序制备得到薄膜样品的EDS测试结果

图1 周期为T1、T2和T3的薄膜样品的XRD衍射图谱

表2 周期为T1、T2和T3的CZTS样品的(112)晶面的结构参数

图2 周期为T1、T2和T3的薄膜样品的Raman散射谱

图3 周期为T1、T2和T3的薄膜样品的表面SEM照片

图4 周期为T1、T2和T3的CZTS薄膜的SEM截面图

图5 周期为T1、T2和T3的CZTS薄膜的(αhν)2与(hν)的关系图

图6 CZTS薄膜太阳电池样品在标准光照下的J-V特性曲线

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