材料研究学报  2013, Vol. 27 Issue (3): 307-311

研究论文 本期目录 | 过刊浏览 |

放电气体对ECR-PECVD法制备微晶硅薄膜的影响

程华1,2 钱永产2 薛军2 吴爱民3 石南林1

1. 中国科学院金属研究所 沈阳 110016 2. 中国人民解放军装甲兵技术学院 长春 130117 3. 大连理工大学 大连 116024

Effect of Dilute Gas on Microcrystalline Si Films Deposited by ECR-PECVD

CHENG Hua1,2 QIAN Yongchan2 XUE Jun2 WU Aimin3 SHI Nanlin1*

1. Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 2. Armor Technique Institute of PLA, Changchun 130117 3. Dalian University of Technology, Dalian 116024

程华, 钱永产, 薛军, 吴爱民, 石南林. 放电气体对ECR-PECVD法制备微晶硅薄膜的影响[J]. 材料研究学报, 2013, 27(3): 307-311.
CHENG Hua^{1, 2} QIAN Yongchan, XUE Jun, WU Aimin, SHI Nanlin^1*. Effect of Dilute Gas on Microcrystalline Si Films Deposited by ECR-PECVD[J]. Chinese Journal of Materials Research, 2013, 27(3): 307-311.

摘要 参考文献 相关文章 Metrics 全文: PDF(1020 KB)   摘要: 用电子回旋共振等离子体增强化学气相沉积(ECR－PECVD)法制备微晶硅薄膜, 研究了放电气体对薄膜沉积速率、薄膜中H含量、择优取向和结晶度的影响。结果表明, 以Ar作为放电气体时薄膜沉积速率比以H2作为放电气体时高1.5—2倍, 但是薄膜的结晶度较低; 以Ar作为放电气体时薄膜的H含量比以H2作为放电气体时的薄膜低; 放电气体对薄膜的择优取向和晶粒度没有显著的影响。 关键词 ： 材料合成与加工工艺,  微晶硅薄膜,  ECR-PECVD,  放电气体     Abstract：The microcrystalline silicon films were deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD) using SiH4/Ar and SiH4/H2 gaseous mixture. The effects of dilute gas on deposition rate, crystallinity, grain size and the configuration of H existing in microcrystalline silicon films were investigated. The results show that the deposition rate of the film using Ar as discharge gas is 1.5-2 times higher than that using H2, but the film crystallinity is lower. At the same time, the concentration of hydrogen in the films deposited using SiH4/Ar is less than that of using SiH4/H2, but the preferred orientations and the grain sizes of the films are analogous. 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