Mn掺杂对Mo1-x Mn x S2 薄膜磁性能的影响

doi:10.11901/1005.3093.2025.181

材料研究学报

2026, Vol. 40

Issue (5): 395-400 DOI: 10.11901/1005.3093.2025.181

研究论文

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Mn掺杂对Mo_1-_x Mn _x S₂ 薄膜磁性能的影响

丁雁翔, 胡文婧, 许嘉莹, 缪姗桦, 陈昊睿, 张晓渝(

)

苏州科技大学物理科学与技术学院太湖光子中心先进技术研究所江苏省高校智能光电器件与芯片重点实验室苏州 215009

Influence of Mn-doping on Magnetic Properties of Mo_1-_x Mn _x S₂ Thin Films

DING Yanxiang, HU Wenjing, XU Jiaying, MIU Shanhua, CHEN Haorui, ZHANG Xiaoyu(

)

Key Laboratory of Intelligent Optoelectronic Devices and Chips of Jiangsu Higher Education Institutions, Advanced Technology Research Institute of Taihu Photon Center, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, China

引用本文:

丁雁翔, 胡文婧, 许嘉莹, 缪姗桦, 陈昊睿, 张晓渝. Mn掺杂对Mo_1-_x Mn _x S₂ 薄膜磁性能的影响[J]. 材料研究学报, 2026, 40(5): 395-400.
Yanxiang DING, Wenjing HU, Jiaying XU, Shanhua MIU, Haorui CHEN, Xiaoyu ZHANG. Influence of Mn-doping on Magnetic Properties of Mo_1-_x Mn _x S₂ Thin Films[J]. Chinese Journal of Materials Research, 2026, 40(5): 395-400.

全文: PDF(3815 KB) HTML

摘要:

用化学气相沉积法制备不同Mn掺杂浓度的Mo_1-_x Mn _x S₂薄膜，系统地研究了Mn掺杂对Mo_1-_x Mn _x S₂薄膜的晶体结构和磁性能的影响。结果表明，Mn原子掺入了MoS₂薄膜中。在低温(2 K)下测试了样品的磁滞回线，表明Mn掺杂提高了薄膜的磁性能，x~9.7%的薄膜其饱和磁化强度为0.0096 emu/mm³，约为少量Mn掺杂样品的3倍，矫顽力约为160 Oe。Mn掺杂MoS₂薄膜磁性的提高，可归因于Mn原子引入的局域磁矩和增强的磁交换相互作用。

关键词 ：材料实验, 二硫化钼薄膜, 磁性能, 锰掺杂, 磁交换作用

Abstract：

Mo_1-_x Mn _x S₂ thin films with different Mn doping amount were prepared by chemical vapor deposition, and the effect of Mn doping on the crystal structure and magnetic properties of Mo_1-_x Mn _x S₂ thin films were systematically investigated. XPS results showed that Mn atoms were efficiently doped into the MoS₂ films. Their hysteresis loops measured at 2 K showed that Mn doping effectively enhanced the magnetic properties of the films, correspondingly, the saturation magnetization was 0.0096 emu/mm³ at x~9.7%, which is about three times of that of the MoS₂ doped with a small amount of Mn, and the coercivity was about 160 Oe. The results also revealed that the enhancement of the magnetism of the Mn-doped MoS₂ films may be mainly attributed to the introduction of the local magnetic moments and the enhanced magnetic exchange interactions of the Mn atoms. The study of the magnetic properties of Mo_1-_x Mn _x S₂ 2D thin films tuned by Mn doping may provide a reference for expanding the applications of these 2D materials in spintronics and magnetic memory devices.

Key words： experiment for materials molybdenum disulfide thin film magnetic property manganese doped magnetic exchange interaction

收稿日期: 2025-05-23

ZTFLH:

O484.5

基金资助:国家自然科学基金(61107093);江苏省普通高校自然科学研究计划(19KJA140001);江苏省研究生科研与实践创新计划(KYCX24_3411)

通讯作者: 张晓渝，教授，xyzhang@usts.edu.cn，研究方向为二维纳米薄膜光电性能

Corresponding author: ZHANG Xiaoyu, Tel: 15151429886, E-mail: xyzhang@usts.edu.cn

作者简介: 丁雁翔，男，2000年生，硕士生

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https://www.cjmr.org/CN/10.11901/1005.3093.2025.181 或 https://www.cjmr.org/CN/Y2026/V40/I5/395

图1 薄膜的CVD生长装置示意图

图2 Mo1-x Mn x S2的光学照片，插图给出了AFM测试的薄膜厚度

表1 不同样品的投料比和XPS测试的元素占比数据

图3 MoS2和Mo1-x Mn x S2的XRD谱

图4 不同Mn掺杂浓度Mo1-x Mn x S2薄膜的Raman光谱

图5 Mo1-x Mn x S2的XPS谱

图6 在2 K温度下不同Mn掺杂浓度样品的磁滞回线，插图给出了MoS2的磁性测量曲线

图7 饱和磁化强度和矫顽力的变化与Mn掺杂浓度的关系

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