材料研究学报, 2026, 40(5): 395-400 DOI: 10.11901/1005.3093.2025.181

研究论文

Mn掺杂对Mo1-x Mn x S2 薄膜磁性能的影响

丁雁翔, 胡文婧, 许嘉莹, 缪姗桦, 陈昊睿, 张晓渝,

苏州科技大学物理科学与技术学院 太湖光子中心先进技术研究所 江苏省高校智能光电器件与芯片重点实验室 苏州 215009

Influence of Mn-doping on Magnetic Properties of Mo1-x Mn x S2 Thin Films

DING Yanxiang, HU Wenjing, XU Jiaying, MIU Shanhua, CHEN Haorui, ZHANG Xiaoyu,

Key Laboratory of Intelligent Optoelectronic Devices and Chips of Jiangsu Higher Education Institutions, Advanced Technology Research Institute of Taihu Photon Center, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, China

通讯作者: 张晓渝,教授,xyzhang@usts.edu.cn,研究方向为二维纳米薄膜光电性能

收稿日期: 2025-05-23   修回日期: 2025-09-08  

基金资助: 国家自然科学基金(61107093)
江苏省普通高校自然科学研究计划(19KJA140001)
江苏省研究生科研与实践创新计划(KYCX24_3411)

Corresponding authors: ZHANG Xiaoyu, Tel: 15151429886, E-mail:xyzhang@usts.edu.cn

Received: 2025-05-23   Revised: 2025-09-08  

Fund supported: National Natural Science Foundation of China(61107093)
Natural Science Foundation of the Jiangsu Higher Education Institutions of China(19KJA140001)
Postgraduate Research & Practice Innovation Program of Jiangsu Province(KYCX24_3411)

作者简介 About authors

丁雁翔,男,2000年生,硕士生

摘要

用化学气相沉积法制备不同Mn掺杂浓度的Mo1-x Mn x S2薄膜,系统地研究了Mn掺杂对Mo1-x Mn x S2薄膜的晶体结构和磁性能的影响。结果表明,Mn原子掺入了MoS2薄膜中。在低温(2 K)下测试了样品的磁滞回线,表明Mn掺杂提高了薄膜的磁性能,x~9.7%的薄膜其饱和磁化强度为0.0096 emu/mm3,约为少量Mn掺杂样品的3倍,矫顽力约为160 Oe。Mn掺杂MoS2薄膜磁性的提高,可归因于Mn原子引入的局域磁矩和增强的磁交换相互作用。

关键词: 材料实验; 二硫化钼薄膜; 磁性能; 锰掺杂; 磁交换作用

Abstract

Mo1-x Mn x S2 thin films with different Mn doping amount were prepared by chemical vapor deposition, and the effect of Mn doping on the crystal structure and magnetic properties of Mo1-x Mn x S2 thin films were systematically investigated. XPS results showed that Mn atoms were efficiently doped into the MoS2 films. Their hysteresis loops measured at 2 K showed that Mn doping effectively enhanced the magnetic properties of the films, correspondingly, the saturation magnetization was 0.0096 emu/mm3 at x~9.7%, which is about three times of that of the MoS2 doped with a small amount of Mn, and the coercivity was about 160 Oe. The results also revealed that the enhancement of the magnetism of the Mn-doped MoS2 films may be mainly attributed to the introduction of the local magnetic moments and the enhanced magnetic exchange interactions of the Mn atoms. The study of the magnetic properties of Mo1-x Mn x S2 2D thin films tuned by Mn doping may provide a reference for expanding the applications of these 2D materials in spintronics and magnetic memory devices.

Keywords: experiment for materials; molybdenum disulfide thin film; magnetic property; manganese doped; magnetic exchange interaction

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本文引用格式

丁雁翔, 胡文婧, 许嘉莹, 缪姗桦, 陈昊睿, 张晓渝. Mn掺杂对Mo1-x Mn x S2 薄膜磁性能的影响[J]. 材料研究学报, 2026, 40(5): 395-400 DOI:10.11901/1005.3093.2025.181

DING Yanxiang, HU Wenjing, XU Jiaying, MIU Shanhua, CHEN Haorui, ZHANG Xiaoyu. Influence of Mn-doping on Magnetic Properties of Mo1-x Mn x S2 Thin Films[J]. Chinese Journal of Materials Research, 2026, 40(5): 395-400 DOI:10.11901/1005.3093.2025.181

二硫化钼(MoS2)是一种典型的过渡金属硫化物,具有独特的层状结构、优异的电学、光学和机械性能[1,2],在光催化、能源存储、传感器等领域有广阔的应用前景[3,4]。用过渡金属元素改性,可提高MoS2二维薄膜材料的电-光、磁-电调控性能[5,6]。锰(Mn)是一种典型的过渡族金属元素,将其掺入MoS2二维薄膜能显著提高其磁性。Mishra等的第一性原理计算结果表明,Mn对Mo1-x Mn x S2二维薄膜磁矩的贡献约为1 µB[7]。Gao等还根据第一性原理计算了Mn掺杂对MoS2电子结构和磁性的影响,证实Mn的掺杂可引入局域磁矩,且Mn 3d轨道之间可通过Mo 4d和S 3p态耦合在Mn-S-Mn和Mn-S-Mo之间产生铁磁性交换作用,使材料的磁性提高[8]。Fan等发现, Mn掺杂的作用优于Fe、Co等元素,是因为Mn的原子半径与Mo更相近,掺杂对MoS2的结构影响较小[9]。Li等制备Mn掺杂MoS2纳米片并研究了其磁性与温度的关系[10]。本文制备一系列不同Mn掺杂浓度(x)的Mo1-x Mn x S2薄膜样品,系统研究Mn掺杂对MoS2薄膜磁性能的影响并阐述其物理机制,为研发掺杂MoS2二维薄膜器件提供实验依据。

1 实验方法

用化学气相沉积(CVD)法制备Mo1-x Mn x S2薄膜[11],主要步骤:实验用基片是尺寸为10 mm × 10 mm的单抛双面SiO2,先将硅基底依次用丙酮、酒精和去离子水超声清洗,然后在氮气气流中干燥。将清洗后的基片置于CVD生长炉中,在炉中放入硫源(S粉)(AR 99.5%,Sigma-Aldrich)、钼源(MoO3)(AR 99.5%,Aladdin)和锰源(MnO2) (AR 99%,Damas),温度区分为两个。将S粉的区域加热至150 ℃,将反应物区域(MoO3和MnO2)加热至750 ℃,升温速率为25 ℃/min。在生长过程中向炉中通入流量为1.8 m3/h的氩气。加热至反应温度保温15 min后即可在硅基衬底上生长出Mn掺杂的Mo1-x Mn x S2薄膜。薄膜的CVD生长示意图在图1中给出。为了研究Mn掺杂浓度(x)对Mo1-x Mn x S2薄膜性能的影响,调节反应物中钼源和锰源的投料比制备出一系列不同Mn掺杂浓度的Mo1-x Mn x S2薄膜样品。然后测试薄膜的微结构和磁性能[12,13]。

图1

图1   薄膜的CVD生长装置示意图

Fig.1   Schematic diagram of the CVD growth device for thin films


用光学显微镜(BX51/BX52)和原子力显微镜(AFM, Multimode 8-HR)测试薄膜的表面光学结构和表面形貌。用X射线衍射仪(XRD, Bruker D8 Advance)测量薄膜的XRD谱。用Raman光谱分析仪(Horiba LabRAM HR Evolution)测试薄膜的Raman散射光谱。用X射线光电子能谱仪(XPS, monochromatic Al Kα X-rays,Kratos Axis Supra TM system, hv= 1486.69 eV)测量薄膜的X射线光电子能谱,确定薄膜表面元素的结合能、元素组成和化学状态。用综合物性测量系统(PPMS, dynacool-9)测量薄膜的磁化强度和矫顽力等磁性能。

2 结果和讨论

2.1 薄膜的晶体结构和成分

图2给出了Mo1-x Mn x S2薄膜表面的光学照片,可见其由边长为40~60 μm的不同三角形结构组成,结晶度较好。磁性测试前,用划片机在10 mm × 10 mm大面积薄膜上切割出S = 5 mm × 5 mm的样片供PPMS测试,用AFM测量不同掺杂薄膜的厚度h,插图给出了薄膜的AFM图像和薄膜厚度的轮廓测试曲线,薄膜的厚度约为60 nm。薄膜的体积约为V =S × h。

图2

图2   Mo1-x Mn x S2的光学照片,插图给出了AFM测试的薄膜厚度

Fig.2   Optical photograph of Mo1-x Mn x S2, inset shows the film thickness as tested by AFM


前驱体的浓度比与实验合成的Mo1-x Mn x S2薄膜中的Mn和Mo的比值略有不同,用XPS测试了薄膜中元素的占比,以此定量标注Mo1-x Mn x S2薄膜中Mn的掺杂浓度x。表1列出了不同浓度样品的投料比与XPS测试的元素占比数据。

表1   不同样品的投料比和XPS测试的元素占比数据

Table 1  Feed ratios of samples and elemental data from XPS results

NumberSulfur powder / mgMoO3/MnO2 powder / mgx in Mo1-x Mn x S2 by calculationx in Mo1-x Mn x S2 measured by XPS
A120020/000
A220018/20.0730.034
A320017/30.1120.048
A420016/40.1510.079
A520015/50.1920.097
A620014/60.2340.127
A720012/80.3220.131
A820010/100.4160.221

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图3给出了MoS2和Mo1-x Mn x S2薄膜样品的XRD谱,谱中2θ = 69.21°处的衍射峰属于基底SiO2中Si的(400)晶面,2θ = 14.59°、32.98°和60.48°处的3个衍射峰分别对应六边形结构的MoS2的(002)、(100)和(112)晶面(JCPDS No. 37-1492)[14,15],表明薄膜中存在MoS2相和结晶度较好。在Mo1-x Mn x S2薄膜的衍射谱中,在2θ = 14.55°、33.07°和60.25°处的3个衍射峰与MoS2的(002)、(100)和(112)晶面相对应,在2θ = 44.33°处的新衍射峰与MnS2相的(220)晶面(JCPDS No. 25-0549)一致[16]。可以观察到,随着掺杂浓度x的增大MnS2相(220)的衍射峰强度提高,也印证了Mn元素在Mo1-x Mn x S2薄膜中掺杂浓度的提高。这表明,Mn已经掺入MoS2薄膜中。

图3

图3   MoS2和Mo1-x Mn x S2的XRD谱

Fig.3   XRD patterns of MoS2 and Mo1-x Mn x S2


图4给出了Mo1-x Mn x S2薄膜的Raman光谱曲线,可见谱中出现了波数约为385和406 cm-1两个主要振动峰,分别对应面内振动E2g1和面外振动A1g模式,二者的频率差约为21 cm-1。E2g1模式对应Mo-S键在层面内的相对剪切振动,A1g模式对应S原子在层面外沿垂直方向的对称伸缩振动。随着Mn掺杂量的提高在Mo1-x Mn x S2薄膜中E2g1模式的峰位变化较小,偏移幅度在1 cm-1以内。A1g模式的振动峰随着Mn的掺杂发生了显著蓝移,波数从406 cm-1移动至411 cm-1,偏移约为5 cm-1,但是随着掺杂浓度的增加偏移趋于稳定。在MoS2的Raman光谱中主要有E2g1和A1g两个振动模式。E2g1模式表示原子在晶格平面内发生相对剪切振动,对材料的晶格应变、层间耦合强度以及晶体各向异性较为敏感。存在整体的外加拉伸或压缩应力时,E2g1模式发生漂移。但是它对局域微小扰动,对点缺陷或低浓度掺杂相对不敏感,相应的频率变化幅度较小。A1g模式则表示原子沿垂直于层面方向发生对称伸缩振动,对电子-声子耦合、载流子浓度和局部应力的变化极为敏感。掺杂等引入的自由载流子加强了电子-声子耦合,使A1g模式发生蓝移或展宽。此外,掺杂原子引起的局部压缩应力也使A1g模式频率提高。但是,载流子浓度及局部应力效应到达一定程度后都趋于饱和,电子-声子耦合强度也不再显著增加,之后A1g模式频率趋于稳定[17,18]。

图4

图4   不同Mn掺杂浓度Mo1-x Mn x S2薄膜的Raman光谱

Fig.4   Raman spectra of Mo1-x Mn x S2 films with different Mn doping amount


在本文的实验中,Mn原子半径为0.139 nm,Mo原子半径为0.145 nm,较为接近。因此,掺杂后薄膜晶格的整体结构没有太大的变化,没有引入较大的外加应力,因此E2g1的峰位没有明显的移动。但是Mn的掺杂引入了大量载流子和局部晶格压缩应力,增强了电子-声子耦合。因此在低Mn掺杂浓度时出现A1g模式频率响应,发生显著蓝移。随着Mn浓度进一步提高载流子浓度和局部应力效应趋向饱和,Mn对A1g的偏移增量贡献减小,偏移频率趋于稳定。掺杂Mn使局部压缩应力增强并引入额外载流子,使E2g1模式微幅漂移 (≤1 cm-1),A1g模式显著蓝移后稳定(≈5 cm-1)。

图5给出了XPS测试的Mo、S和Mn的核心能级光谱。图5a的全谱图表明,样品中有掺杂的Mn以及MoS2基体中的主要元素成分Mo和S。图5b表明,Mo 3d的两个主要峰位分别出现在227.7 eV (Mo 3d5/2)和231.0 eV (Mo 3d3/2)处,进行解卷积将Mo 3d5/2和Mo 3d3/2分解为两个组分,以进行良好的拟合。第一组分位于227.5和230.7 eV,对应化学计量比的本征MoS2,反映完整的Mo-S键合特性。第二组分位于227.9 eV和231.3 eV处,结合能比化学计量MoS2略低(约0.4 eV),对应具有硫空位的缺陷或亚化学计量MoS2。Mo的半峰全宽(FWHM)约为1.12 eV,表明样品中的二硫化钼具有良好的化学计量特性和晶体完整性[19]。

图5

图5   Mo1-x Mn x S2的XPS谱

Fig.5   XPS spectra of Mo1-x Mn x S2 (a) full spectrum, (b) Mo 3d, (c) S 2p, (d) Mn 2p


图5c给出了S元素的XPS谱。S 2p谱的结合能位置和峰的分裂(S 2p3/2和S 2p1/2)表明,S元素主要以化学计量的S2-状态存在,样品Mo1-x Mn x S2的化学计量比良好。在样品的谱中未出现明显的硫缺陷峰或其他化学状态的硫峰,表明硫空位的浓度较低,进一步确认了S元素的化学价态与化学计量MoS2的特性一致[20]。图5d表明,Mn 2p的XPS谱由一个位于结合能为640.2 eV和652.2 eV的突出双峰组成,并分别伴随着一个分别位于644.9 eV和656.7 eV的卫星双峰。其原因是,在MnO2原料的加热过程中,随着氧气的释放生成了三种低价锰氧化物。不同氧化态的锰呈现出不同的化学环境,从而产生不同的电子结构和XPS结合能。

以上一系列的元素表征和分析,都证实Mn原子已经掺入MoS2中。

2.2 薄膜的磁性能

图6给出了不同Mn掺杂浓度的Mo1-x Mn x S2薄膜的低温(2 K)磁滞回线。插图中MoS2的磁化曲线表明,MoS2具有典型的反铁磁性。但是,掺杂后的Mo1-x Mn x S2薄膜出现磁滞回线,表现出典型的铁磁行为,并且饱和磁化强度和矫顽力也随着Mn掺杂程度的不同而变化。Mishra等和Gao等基于不同Mn掺杂浓度的模型进行了第一性原理计算[7,8],发现Mn替代Mo使Mn未成对的3d电子在自旋向上/向下通道上发生分裂,增强了自旋极化和局域磁矩,使低Mn掺杂浓度的薄膜具有铁磁性。随着Mn掺杂浓度的提高Mn 3d轨道之间通过Mo 4d和S 3p态耦合在Mn-S-Mn和Mn-S-Mo之间产生交换作用。按照Goodenough-Kanamori规则[21],如果两个阳离子与阴离子共线呈180°,则两个阳离子之间的相互作用为反铁磁性;如果两个阳离子与阴离子介入导致超交换作用呈90°夹角,其相互作用为铁磁性。因此,因Mn掺杂浓度的不同体系中同时存在铁磁耦合和反铁磁耦合两种机制。

图6

图6   在2 K温度下不同Mn掺杂浓度样品的磁滞回线,插图给出了MoS2的磁性测量曲线

Fig.6   Hysteresis of samples with different Mn doping amout (a) x = 0.034、0.048、0.079、0.097, (b) x = 0.127、0.131、0.221 at 2 K, the inset of (b) shows the magnetic properties of MoS2 film


进一步分析Mo1-x Mn x S2薄膜的磁性能,得到了薄膜样品的饱和磁化强度Ms和矫顽力Hc与Mn掺杂浓度x的关系(图7)。从图7可见,饱和磁化强度Ms先上升后下降。掺杂浓度约为9.7%的薄膜,其饱和磁化强度达到了最大值0.0096 emu/mm3,比少量掺杂的薄膜提高了2~3倍。体系中的局域磁矩,使低Mn掺杂浓度的薄膜具有铁磁性。随着Mn掺杂浓度的提高,Mn-S-Mn和Mn-S-Mo之间产生铁磁交换作用。一定浓度的Mn掺杂,使体系的铁磁性增强。随着Mn掺杂浓度的提高薄膜晶格的局部扭曲使反铁磁性交换作用增强,两种交换作用机制的竞争降低了体系的铁磁性。实验中,低Mn浓度(x <5%)的薄膜,较低的Mn离子浓度使磁性交换通道较少,其磁性主要源于Mn离子提供的局域磁矩,因此饱和磁化强度Ms随之降低。在中Mn浓度(x ≈ 5%~10%)的薄膜中,进入晶格的Mn离子较多而提高了铁磁交换作用,Ms随x的增大而很快提高且在x~9.7%达到最大。随着Mn掺杂浓度进一步提高(x >10%)薄膜晶体的局部扭曲使不同邻近的Mn-S-Mn和Mn-S-Mo路径的键角分布改变,有些键角偏向铁磁性的90°,有些偏向反铁磁性的180°,两种耦合相互竞争削弱了薄膜整体的铁磁性,使Ms不再升高且有所下降。同时,从图7可见,Mo1-x Mn x S2薄膜的矫顽力随着Mn掺杂浓度的提高而增大。其原因是,Mn掺杂引起的钉扎效应阻碍了畴壁移动,进而使得薄膜的矫顽力随之增大。因此,控制Mn的掺杂量可调控Mo1-x Mn x S2薄膜的磁性能。

图7

图7   饱和磁化强度和矫顽力的变化与Mn掺杂浓度的关系

Fig.7   Variation of saturation magnetization strength and coercivity with variation of Mn doping amount


将饱和磁化强度Ms (emu/mm3)的实验值与根据第一性原理计算出的理论值比较,即以玻尔磁子表示的每个Mn原子的磁矩m'(μB/Mn atom, μB为玻尔磁子)。根据Mo0.952Mn0.048S2计算出其每个Mn原子的磁矩。样品Mo0.952Mn0.048S2的饱和磁化强度的测试值为Ms = 0.00866 emu/mm3,显微镜和台阶仪测试得薄膜体积为V = 0.0013 mm3,则总磁矩m为Ms × V = 1.13 × 10-5 emu。已知1个玻尔磁子1 μB ≈ 9.274 × 10-21 emu,所以总磁矩m(μB)为1.21 × 1015 μB。化学计量比为Mo0.952Mn0.048S2表示每个化学式中有0.048个Mn原子,摩尔质量为158.17 g/mol,根据MoS2的密度ρ ≈ 5.06 g/cm3 [22],可得摩尔数为4.16 × 10-8 mol,相应样品中Mn原子数NMn为1.20 × 1015个。最终得每个Mn原子的磁矩为1.21 × 1015 μB/1.20 × 1015 = 1.01 μB。即掺杂的Mn原子浓度为4.8%的样品,每个Mn原子的磁矩为1.01 μB,与第一性原理计算的理论计算值1 μB一致[7]。这表明,实验的掺杂效果和Mo1-x Mn x S2薄膜的磁性能较好。实验结果证实,Mn的掺杂可在MoS2晶体中引入额外的磁矩,使磁交换相互作用增强而显著提高薄膜材料的磁性能。

3 结论

用化学气相沉积法可制备不同Mn掺杂浓度的Mo1-x Mn x S2薄膜。Mn元素掺入MoS2薄膜可增强MoS2薄膜的磁性能。MoS2薄膜磁性的增强,主要源于Mn原子引入的局域磁矩以及增强的磁交换相互作用,揭示了Mn掺杂对二维材料磁性能调控的物理机制,明确了Mo1-x Mn x S2薄膜磁性能与Mn掺杂浓度之间的定量关系。

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