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材料研究学报  2011, Vol. 25 Issue (4): 408-412    
  研究论文 本期目录 | 过刊浏览 |
基片温度对微晶硅薄膜微观结构和光学性能的影响
程华1,2, 王萍2, 崔岩2, 吴爱民3,  石南林1
1.中国科学院金属研究所 沈阳 110016
2.中国人民解放军装甲兵技术学院 长春 130117
3.大连理工大学 大连 116024
Influence of Substrate Temperature on Microstructure and Optical Properties of Microcrystalline Si Films
CHENG Hua1,2, WANG Ping2,  CUI Yan2,  WU Aimin3,  SHI Nanlin1
1.Institute of metal research, Chinese Academy of Sciences, Shenyang 110016
2.Armor technique institute of PLA, Changchun 130117
3.Dalian university of technology, Dalian 116024
引用本文:

程华 王 萍 崔 岩 吴爱民 石南林. 基片温度对微晶硅薄膜微观结构和光学性能的影响[J]. 材料研究学报, 2011, 25(4): 408-412.
. Influence of Substrate Temperature on Microstructure and Optical Properties of Microcrystalline Si Films[J]. Chin J Mater Res, 2011, 25(4): 408-412.

全文: PDF(811 KB)  
摘要: 以Ar+SiH4作为反应气体, 采用电子回旋共振等离子体增强化学气相沉积(ECR--PECVD)方法制备微晶硅薄膜, 研究了基片温度对薄膜微观结构、吸收系数、光学禁带宽度的影响。结果表明, 随着基片温度的升高, 薄膜的微观组织逐渐由非晶转化为微晶, 薄膜的粗糙度单调增大, 而H含量则单调减小。薄膜的光学吸收系数随基片温度的升高而增大, 禁带宽度由1.89 eV降低到1.75 eV。
关键词 材料合成与加工工艺微晶硅薄膜ECR--PECVD吸收系数光学带隙    
Abstract:Microcrystalline silicon films were deposited using Ar diluted SiH4 gaseous mixture by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD). The effects of the substrate temperature on microstrcture and optical properties of microcrystalline silicon films were investigated. The results show that, with the increasing of the substrate temperature, the crystallinity and roughness increased, but the concentration of hydrogen decreased monotonously. Furthermore, the absorption coefficient of the films increased monotonously, and the optical bandgap changed from 1.89 eV to 1.75 eV with the substrate  temperature ranging from 200 # to 500 #.
Key wordssynthesizing and processing technics    microcrystalline silicon film    ECR-PECVD    absorption coefficient    optical bandgap
收稿日期: 2010-12-16     
ZTFLH: 

TB321

 
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