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材料研究学报  2018, Vol. 32 Issue (4): 278-282    DOI: 10.11901/1005.3093.2017.398
  研究论文 本期目录 | 过刊浏览 |
低温反应溅射沉积α-(Al,Cr)2O3
邱万奇1(), 王书林1, 程奕天1, 刘仲武1, 钟喜春1, 焦东玲1, 周克崧1,2
1 华南理工大学材料科学与工程学院 广州 510640
2 广东省科学院 广东省新材料研究所 广州 510650
Low-temperature Deposition of α-(Al,Cr)2O3 Films by Reactive Sputtering Method
Wanqi QIU1(), Shulin WANG1, Yitian CHENG1, Zhongwu LIU1, Xichun ZHONG1, Dongling JIAO1, Kesong ZHOU1,2
1 College of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China
2 Guangdong Research Institute of New Materials, Guangdong Academy of Sciences, Guangzhou 510650, China
引用本文:

邱万奇, 王书林, 程奕天, 刘仲武, 钟喜春, 焦东玲, 周克崧. 低温反应溅射沉积α-(Al,Cr)2O3膜[J]. 材料研究学报, 2018, 32(4): 278-282.
Wanqi QIU, Shulin WANG, Yitian CHENG, Zhongwu LIU, Xichun ZHONG, Dongling JIAO, Kesong ZHOU. Low-temperature Deposition of α-(Al,Cr)2O3 Films by Reactive Sputtering Method[J]. Chinese Journal of Materials Research, 2018, 32(4): 278-282.

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摘要: 

使用AlCr合金靶材在高功率脉冲磁控溅射系统中低温反应溅射沉积氧化物薄膜,并与使用纯Al靶反应溅射的薄膜对比。用纳米压痕仪测量薄膜的力学性能,使用扫描电镜(SEM)、掠入射X射线衍射(GIXRD)和能谱仪(EDS)等手段研究了沉积薄膜的表面形貌、相结构和元素组成。结果表明,反应溅射Al时靶表面火花放电严重且工艺不稳定,因此所沉积的薄膜表面粗糙、疏松,硬度低;而反应共溅射AlCr能抑制靶表面火花放电,沉积薄膜平整、致密且硬度高;在540℃和10%氧分压条件下,可沉积出以α-(Al,Cr)2O3为主的刚玉型结构氧化物薄膜。

关键词 材料表面与界面氧化物薄膜α-(Al,Cr)2O3高功率脉冲磁控溅射AlCr合金靶纳米压痕    
Abstract

The corundum structure oxide films were successfully deposited by HPPMS (High Power Pulsed Magnetron Sputtering) method by reactive sputtering Al- and AlCr alloy-target respectively at low-temperature. The surface morphology, phase constituent, chemical composition and mechanical property of the as-deposited films were analyzed by SEM (Scanning Electron Microscopy), GIXRD (Grazing Incidence X-ray Diffraction), EDS (Energy Dispersive Spectroscopy) and Hysitron TI 950 nanoindentation, respectively. Results show that Al2O3 films deposited by sputtering Al target contain a large number of droplet-particles caused by micro-arcing on the target-surface during reactive sputtering process. The droplet-particles not only increase the surface roughness but micro-porosity in the film as well, which then greatly decreases the film hardness. The micro-arcing can be effectively eliminated by using Al-50% Cr alloy target. The stable sputtering process ensures the deposition of smooth and compact films, thereby increases the film hardness greatly. The corundum phase films of α-(Al,Cr)2O3 could be fabricated at 540℃ and 10% O2 partial pressure.

Key wordssurface and interface in the materials    oxide films    α-(Al,Cr)2O3    high power pulsed magnetron sputtering    AlCr alloy target    nanoindentation
收稿日期: 2017-07-03     
基金资助:资助项目 国家自然科学基金(51271079),广东省自然科学基金(2015A030313223)
作者简介:

作者简介 邱万奇,男,1964年生,教授

图1  使用AlCr靶和Al靶在540℃和10%氧分压条件下沉积的薄膜表面和断面(插图)SEM形貌
图2  使用AlCr合金靶和Al靶沉积出的薄膜的GIXRD谱
图3  不同温度沉积的薄膜的EDS能谱
图4  高功率脉冲溅射的Al2O3和α-(Al,Cr)2O3薄膜的纳米压痕曲线(540℃+10%O2)
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