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Chin J Mater Res  2009, Vol. 23 Issue (3): 264-268    DOI:
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Analysis of residual stress and micro--stress in free--standing boron--doped polycrystalline diamond films by XRD
 XU Yue 1;   ZHANG Tong 2;   LI Liuan 2;   LI Hongdong 2;   LU Xianyi 2;  JIN Zengsun2
1.Test Science Experiment Center; Jilin University; Changchun 130012
2.State Key Laboratory of Superhard Materials; Jilin University; Changchun 130012
Cite this article: 

XU Yue ZHANG Tong LI Liuan LI Hongdong LU Xianyi JIN Zengsun. Analysis of residual stress and micro--stress in free--standing boron--doped polycrystalline diamond films by XRD. Chin J Mater Res, 2009, 23(3): 264-268.

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Abstract  

The residual stress and micro--stress in free--standing boron--doped polycrystalline diamond films, grown by an electron--assisted hot filament chemical vapor deposition (EA--HFCVD) were analyzed by X--ray diffraction (XRD) including sin2 φ method. The results show that the residual stress is compressive. With increasing boron flow
rate, the stress is gradually decreased. The micro--stress varies as  tensile →compressive→ tensile in the films fabricated with increasing boron flow rate in the growth processes. The variations in the residual stress and micro--stress as a function of boron doping level are strongly dependent on the grain size, growth orientation, and appearance of twins in the boron--doped diamond films.

Key words:  inorganic non--metallic materials      CVD diamond films      boron--doping      XRD      residual stress      micro--stress     
Received:  28 November 2008     
ZTFLH: 

O484

 
Fund: 

Supported by Program for New Century Excellent Talents in University No.NCET--06--0303, and National Natural Science Foundation of China No.50772041.

URL: 

https://www.cjmr.org/EN/     OR     https://www.cjmr.org/EN/Y2009/V23/I3/264

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