Preparation Process and Reaction Mechanism of Silicon Carbide Absorbing Materials by In-situ Reaction Method at High Temperature

doi:10.11901/1005.3093.2023.563

Chinese Journal of Materials Research

2024, Vol. 38

Issue (9): 659-668 DOI: 10.11901/1005.3093.2023.563

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Preparation Process and Reaction Mechanism of Silicon Carbide Absorbing Materials by In-situ Reaction Method at High Temperature

CUI Sikai¹, FU Guangyan¹(

), LIN Lihai², YAN Yukun², LI Chusen²(

)

1 School of Mechanical and Power Engineering, Shenyang University of Chemical Technology, Shenyang 110142, China
2 Shenyang National Research Center for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China

Cite this article:

CUI Sikai, FU Guangyan, LIN Lihai, YAN Yukun, LI Chusen. Preparation Process and Reaction Mechanism of Silicon Carbide Absorbing Materials by In-situ Reaction Method at High Temperature. Chinese Journal of Materials Research, 2024, 38(9): 659-668.

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Abstract

Silicon carbide (SiC) as a kind of high temperature absorbing materials has great application potential, but its application range is limited due to high preparation cost. Herein, the SiC absorbing materials by in-situ reaction of pyrolytic carbon and silicon powder were prepared in vacuum at 1800^oC, 2000^oC and 2200^oC respectively, aiming to clarifying the relevant reaction mechanism so that to search the way for saving preparation cost. The microstructure, phase composition and electromagnetic properties of the three kinds of SiC materials were assessed. The results show that during the in-situ reaction of SiC preparation, the β-phase SiC with 3C crystallographic structure is formed at 1800^oC, while at 2000^oC the β-phase SiC begins to transform into α-phase SiC with 6H crystallographic structure via evaporation and condensation processes. With the increase of the reaction temperature, the degree of phase trasformation reaction was gradually intensified. Spontaneously, the proportion of α phase SiC also increases gradually, and the dielectric loss ability of the corresponding SiC materials to electromagnetic waves is gradually weakened, the impedance matching performance is gradually improved. In brief, the prepared SiC material presents appropriate comprehensive performance of dielectric loss and impedance matching when the preparation temperature is set above ≥ 2000^oC, suitable for use as a wave absorbing material. The results show that it is feasible to prepare SiC absorbing materials with low preparation cost by in-situ reaction method.

Key words: composite silicon carbide microwave absorbing material sic phase transformation in-situ reaction microwave-absorbing ability

Received: 24 November 2023

ZTFLH:

TB321

Corresponding Authors: LI Chusen, Tel: 13889306569, E-mail: csli@imr.ac.cn
FU Guangyan, Tel: 13504997591, E-mail: Fu_guangyan@126.com

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https://www.cjmr.org/EN/10.11901/1005.3093.2023.563 OR https://www.cjmr.org/EN/Y2024/V38/I9/659

Fig.1 Flow chart of in-situ reaction method for preparing silicon carbide materials

Fig.2 SEM characterization of SiC samples (a) SEM image of the T1800 specimen, (b) SEM image of the T2000 specimen, (c) SEM image of the T2200 specimen, (d) typical surface morphology of SiC grain growth at 2000^oC

Fig.3 XRD patterns of SiC samples with different reaction sintering temperatures

Table 1 Results of quantitative analysis of T2000^# and T2200^# samples

Fig.4 TEM characterization of T1800 sample (a) low-magnification image of the T1800 specimen, (b) high-magnification image of the T1800 specimen, (c) selected area electron diffraction pattern of figure a, (d) enlarged view of selected area of figure b

Fig.5 TEM characterization of T2000 sample: (a) low-magnification image of the T2000 specimen, (b) high power diagram of T2000 sample, the upper right corner is the FFT diagram of b diagram, (c) selected area electron diffraction pattern of figure a, (d) enlarged view of the selected area of figure b

Fig.6 TEM characterization of T2200 sample: (a) low-magnification image of the T2200 specimen, (b) high power diagram of T2200 sample, the upper right corner is the FFT diagram of b diagram, (c) selected area electron diffraction pattern of figure a, (d) enlarged view of the selected area of figure b

Fig.7 Dielectric constant of SiC absorbing material (a) real part of dielectric constant, (b) imaginary part of dielectric constant, (c) loss angle tangent ε″/ε′

Fig.8 Intrinsic impedance of samples T1800, T2000,T2200

Fig.9 Reflectivity simulation model of SiC absorbing material

Fig.10 Reflectivity of T1800, T2000, T2200 specimens of different thicknesses

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