Massive Preparation and Supercapacitor Performance of Layered Ti3C2

doi:10.11901/1005.3093.2020.167

Chinese Journal of Materials Research

2020, Vol. 34

Issue (11): 861-867 DOI: 10.11901/1005.3093.2020.167

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Massive Preparation and Supercapacitor Performance of Layered Ti₃C₂

YANG Zhanxin, WU Qiong(

), REN Yiqiao, QU Kaikai, ZHANG Zhehao, ZHONG Weili, FAN Guangning, QI Guochao

School of Material Science and Engineering, Liaoning University of Technology, Jinzhou 121001, China

Cite this article:

YANG Zhanxin, WU Qiong, REN Yiqiao, QU Kaikai, ZHANG Zhehao, ZHONG Weili, FAN Guangning, QI Guochao. Massive Preparation and Supercapacitor Performance of Layered Ti₃C₂. Chinese Journal of Materials Research, 2020, 34(11): 861-867.

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Abstract

The high-purity precursor material Ti₃AlC₂ was prepared via in situ sintering technology with mixed powders of titanium, aluminum, graphite and a small amount of tin as raw material by changing the ratio of powders and sintering time. Then the precursor material Ti₃AlC₂ was subjected to selective etching with concentrated hydrofluoric acid, and finally massive material of layered Ti₃C₂ with adjustable layer spacing was prepared by changing the etching time. The microstructure and microscopic morphology of the layer spacing of Ti₃AlC₂ and Ti₃C₂ were characterized by X-ray diffractometer and field emission scanning electron microscopy and their electrochemical performance was comparatively assessed. Among others, the specific capacity of the present prepared electrode under the same condition is greatly improved, showing good performance of supercapacitor.

Key words: synthesizing and processing technics for materials Ti₃AlC₂ Ti₃C₂ selective etching specific capacity

Received: 18 May 2020

ZTFLH:

TQ152

Fund: Basic Research Program of Liaoning Province Education Department(JQL201715404)

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	Articles by authors
	Zhanxin YANG
	Qiong WU
	Yiqiao REN
	Kaikai QU
	Zhehao ZHANG
	Weili ZHONG
	Guangning FAN
	Guochao QI

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https://www.cjmr.org/EN/10.11901/1005.3093.2020.167 OR https://www.cjmr.org/EN/Y2020/V34/I11/861

Fig.1 Schematic diagram of preparation and electrochemical properties of Ti₃C₂ synthesized by selective etching of high purity Ti₃AlC₂

Fig.2 (a) X-ray diffraction patterns of 3Ti/1.2Al/1.9C samples obtained by sintering at different temperatures for 30 min; (b) X-ray diffraction patterns of 3Ti/1.2Al/1.9C sample obtained by sintering at 1400℃ for 30 min; (c) Mass percentage curve of Ti₃AlC₂ in 3Ti/1.2Al/1.9C obtained by sintering at different temperatures; (d) X-ray diffraction patterns of the precursor Ti₃C₂ obtained by different etching time

Fig.3 SEM photographs of Ti₃C₂ obtained by etching precursor Ti₃AlC₂ for different time (a) Ti₃AlC₂; (b) 6 h; (c) 12 h; (d) 18 h; (e) 24 h; (f) 30 h; (g) 36 h

Fig.4 CV curves of Ti₃AlC₂ and Ti₃C₂ electrodes prepared with different selective etching times at scanning speed 20 mV/s (a); CV curves of Ti₃C₂-24 h electrodes at different scanning speeds (b); GCD curves of Ti₃AlC₂ and Ti₃C₂ electrode under 1 A/g current density prepared at different etching times (c); GCD curves of Ti₃C₂-24 h electrode under different current density (d); EIS impedance spectra of the precursor material Ti₃AlC₂ electrode and the Ti₃C₂ electrode prepared at different etching times (e) and cycling performance of T₃C₂-24 h electrode (f)

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