The Preparation of Microcrystalline Si Films Deposited by ECR-PECVD Using SiH4+Ar

Chin J Mater Res

2010, Vol. 24

Issue (5): 547-549 DOI:

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The Preparation of Microcrystalline Si Films Deposited by ECR-PECVD Using SiH4+Ar

CHENG Hua, ZHANG Xin, ZHANG Guangcheng, LIU Ruhong, WU Aimin, SHI Nanlin

1.Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016
2.Armor Technique Institute of PLA, Changchun 130117
3.Dalian University of Technology, Dalian 116024

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CHENG Hua ZHANG Xin ZHANG Guangcheng LIU Ruhong WU Aimin SHI Nanlin. The Preparation of Microcrystalline Si Films Deposited by ECR-PECVD Using SiH4+Ar. Chin J Mater Res, 2010, 24(5): 547-549.

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Abstract Microcrystalline silicon films were prepared using Ar diluted SiH4 gaseous mixture by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR--PECVD). The effects of the microwave power on deposition rate, crystallinity, grain size and the configuration of H existing in microcrystalline silicon films were investigated. The results show that the crystallinity increases and the concentration of hydrogen decreases monotonously with the increasing of the microwave power. But the deposition rate first increases monotonously, and then decreases. Optimized microwave power is 600 W for the highest deposition rate. <111> orientation is the only dominant crystal texture for films obtained with different power.

Key words: synthesizing and processing technics microcrystalline silicon film Ar-dilution ECR-PECVD microwave power

Received: 07 June 2010

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