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LOW-TEMPERATURE Hg SENSITIZED PHOTOCHEMICAL VAPOR DEPOSITED Si_3N_4 FILMS |
JING Junhai SUN Qing FU Junxing SUN Jiancheng (University of Electronics Science and Technology of Xi'an) |
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Cite this article:
JING Junhai SUN Qing FU Junxing SUN Jiancheng (University of Electronics Science and Technology of Xi'an). LOW-TEMPERATURE Hg SENSITIZED PHOTOCHEMICAL VAPOR DEPOSITED Si_3N_4 FILMS. Chin J Mater Res, 1991, 5(3): 247-251.
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Abstract Si_3N_4 films have been deposited on Si wafers at temperature range of 100—200℃ by photo-CVD technique.This paper presents the relationship between the deposi-tion rate and other deposition parameters of the films.The physical,chemical and mechani-cal pro
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Received: 25 June 1991
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1 Padmanabhan R et al.J Vac Sci Technol,1988;A6;2226 2 Bertl M et al.Thin Solid Films,1988;165:279 3 Peters J W et al.Solid State Technology,1980;9:121 4 Ehrlich D J et al.Appl Phys Lett,1981;38;946 5 Sinha A K et al.J Electrochem Soc,1978;125:601 6 金原粲,藤原英夫著,王力衡,郑海涛译.薄膜.北京:电子工业出版社,1988:13 |
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