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Chin J Mater Res  1991, Vol. 5 Issue (3): 247-251    DOI:
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LOW-TEMPERATURE Hg SENSITIZED PHOTOCHEMICAL VAPOR DEPOSITED Si_3N_4 FILMS
JING Junhai SUN Qing FU Junxing SUN Jiancheng (University of Electronics Science and Technology of Xi'an)
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JING Junhai SUN Qing FU Junxing SUN Jiancheng (University of Electronics Science and Technology of Xi'an). LOW-TEMPERATURE Hg SENSITIZED PHOTOCHEMICAL VAPOR DEPOSITED Si_3N_4 FILMS. Chin J Mater Res, 1991, 5(3): 247-251.

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Abstract  Si_3N_4 films have been deposited on Si wafers at temperature range of 100—200℃ by photo-CVD technique.This paper presents the relationship between the deposi-tion rate and other deposition parameters of the films.The physical,chemical and mechani-cal pro
Key words:  low-temperature      Hg sensitizing      photo-CVD      Si_3N_4      films     
Received:  25 June 1991     
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